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參數(shù)資料
| 型號(hào)： | MA718 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ACB 3C 3#16S PIN PLUG |
| 中文描述： | SILICON, L BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 47K |
| 代理商： | MA718 |
1
Schottky Barrier Diodes (SBD)
MA6X718
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I
Features
Three MA3X704As in the same direction are contained in one
package
Optimum for low-voltage rectification because of its low forward
rise voltage (V
F
)
Optimum for high-frequency rectification because of its short re-
verse recovery time (t
rr
)
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
I
FM
30
V
Peak forward current
*
150
mA
Forward current (DC)
*
I
F
T
j
T
stg
30
mA
Junction temperature
125
°
C
°
C
Storage temperature
55 to
+
125
4 : Anode 3
5 : Anode 2
6 : Anode 1
Mini Type Package (6-pin)
Internal Connection
Marking Symbol: M2N
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F1
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f
= 1 MHz
1
μ
A
Forward voltage (DC)
0.4
V
V
F2
C
t
1.0
V
Terminal capacitance
1.5
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
1.0
ns
Detection efficiency
η
V
in
= 3 V
(peak)
, f
= 30 MHz
R
L
= 3.9 k
, C
L
= 10 pF
65
%
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
2.8
+
0.2
0.3
1.5
+
0.25
0.05
0.65
±
0.15
0.65
±
0.15
1
6
5
4
3
2
1
±
0
0
0
1
±
0
0
+
0
0
0
+
0
0
2
+
0
0
1
+
0
0
0
0.4
±
0.2
0
0
+
0
0
0.1 to 0.3
6
5
4
1
2
3
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) * : Value in per diode
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