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參數(shù)資料
| 型號(hào)： | MA6D50 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon planar type (cathode common) |
| 中文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | MA6D50 |
1
Fast Recovery Diodes (FRD)
MA3D650
Silicon planar type (cathode common)
For high-frequency rectification
I
Features
Low forward rise voltage V
F
Fast reverse recovery time t
rr
TO-220D (Full-pack package) with high dielectric breakdown
voltage
>
5.0 kV
Easy-to-mount, caused by its V cut lead end
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
200
V
Non-repetitive peak reverse
surge voltage
V
RSM
200
V
Average forward current
I
F(AV)
10
A
Non-repetitive peak forward
surge current
*
I
FSM
60
A
Junction temperature
T
j
T
stg
40 to
+
150
40 to
+
150
°
C
°
C
Storage temperature
Note) * : Half sine-wave; 10 ms/cycle
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Repetitive peak reverse current
I
RRM1
V
RRM
= 200 V, T
C
= 25
°
C
V
RRM
= 200 V, T
j
= 150
°
C
I
F
= 5 A, T
C
= 25
°
C
I
F
= 1 A, I
R
= 1 A
100
μ
A
I
RRM2
V
F
t
rr
6
mA
Forward voltage (DC)
0.98
V
Reverse recovery time
*
30
ns
Thermal resistance
R
th(j-c)
R
th(j-a)
3
°
C/W
°
C/W
63
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg
×
cm
3. * : t
rr
measuring circuit
Internal Connection
D.U.T
t
rr
0.1
×
I
R
I
F
I
R
50
5.5
50
1
2
3
1
9.9
±
0.3
1
±
0
1
±
0
4
±
0
4.6
±
0.2
2.9
±
0.2
0.8
±
0.1
1.4
±
0.2
1.6
±
0.2
2
3
φ
3.2
±
0.1
2.6
±
0.1
0.55
±
0.15
2.54
±
0.3
5.08
±
0.5
3
±
0
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