參數(shù)資料
型號： MA4T85635
元件分類： 小信號晶體管
英文描述： C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： MICRO-X-4
文件頁數(shù)： 5/12頁
文件大?。?/td> 120K
代理商： MA4T85635
Moderate Power High fT NPN Silicon Transistor
MA4T856 Series
V3.00
Specifications Subject to Change Without Notice.
M/A-COM Inc.
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel. +85 2 2111 8088
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +85 2 2111 8087
Fax +44 (1344) 300-020
MA4T856 Series
Electrical Specifications @ +25
°C
MA4T85600
MA4T85633
MA4T85635
MA4T85639
Symbol
Parameters
Test Conditions
Units
Chips
SOT-23
Micro-X
SOT-143
fT
Gain Bandwidth
Product
VCE=8V, IC=30mA
GHz
7.0 typ.
|S21E|2
Insertion Power
Gain
VCE=8V, IC=20MA, f=1GHz
dB
13.5 min.
12 min.
13.0 min.
12 min.
NF
Noise Figure
VCE=8V, IC=10mA, f=1GHz
dB
1.6 max.
1.7 max.
1.6 max.
1.7 max.
GA
Associated Gain
VCE=8V, IC=10mA, f=1GHz
dB
16 typ.
15 typ.
16 typ.
15 typ.
P1dB
Output Power at 1
dB Compression
VCE=8V, IC=40mA, f=1GHz,
f=2GHz
dBm
16 typ.
10 typ.
13 typ.
10 typ.
16 typ.
10 typ.
13 typ.
10 typ.
RTH(J-A)
Thermal Resistance
Junction/Ambient (Free Air)
°C/W
-
600 max.
550 max
600 max.
RTH(J-C)
Thermal Resistance
Junction/Case
°C/W
60 max.
1
200 typ.
1 See power derating curves.
Electrical Specifications @ +25
°C
Symbol
Parameters
Test Conditions
Units
Min.
Typ.
Max.
ICBO
Collector Cut-off Current
VCB = 8V, IE = 0
A
-
1.0
IEBO
Emitter Cut-off Current
VEB = 1V, IC = 0
A
--
1
hFE
Forward Current Gain
VCE = 8V, IC = 20mA
-
20
100
250
COB
Collector-Base Junction Capacitance
VCB = 8 V, f = 1 MHz
pF
-
0.62
0.75
MA4T85635
Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 10 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
200
0.581
-97.9
16.95
117.1
0.033
44.9
0.685
-46.4
400
0.516
-151.1
10.72
83.5
0.045
27.8
0.481
-65.0
600
0.496
177.1
7.59
60.3
0.054
17.9
0.396
-79.0
800
0.487
153.4
5.84
40.7
0.064
8.6
0.355
-91.6
1000
0.483
133.2
4.74
22.7
0.074
1.0
0.334
-105.0
1200
0.481
114.9
3.99
5.6
0.085
11.4
0.324
-118.0
1400
0.479
97.7
3.46
-11.0
0.097
22.2
0.317
-132.0
1600
0.478
81.2
3.06
-27.3
0.109
33.6
0.311
-147.0
1800
0.478
65.1
2.74
-43.4
0.121
45.4
0.311
-162.0
2000
0.476
49.4
2.49
-59.3
0.133
57.3
0.315
-177.0
2200
0.475
33.9
2.29
-75.0
0.145
69.5
0.314
168.4
2400
0.475
18.4
2.12
-90.6
0.158
82.0
0.311
152.6
2600
0.474
3.9
1.98
-106.1
0.170
94.7
0.317
136.0
2800
0.473
-12.2
1.86
-121.5
0.183
107.3
0.324
121.0
3000
0.472
-27.4
1.76
-136.7
0.197
120.1
0.323
107.0
4000
0.472
-103.3
1.39
148.1
0.267
174.4
0.336
28.5
5000
0.476
-176.5
1.17
74.8
0.340
107.1
0.367
-49.0
6000
0.484
104.4
1.03
3.1
0.415
38.2
0.375
-126.0
相關(guān)PDF資料
PDF描述
MAT-02NBC 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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