參數(shù)資料
型號: MA4T85633
元件分類: 小信號晶體管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SO-3
文件頁數(shù): 9/12頁
文件大?。?/td> 120K
代理商: MA4T85633
Moderate Power High fT NPN Silicon Transistor
MA4T856 Series
V3.00
Specifications Subject to Change Without Notice.
M/A-COM Inc.
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel. +85 2 2111 8088
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +85 2 2111 8087
Fax +44 (1344) 300-020
Typical Performance Curves
MA4T856 SERIES POWER DISSIPATION
0
200
400
600
800
1000
1200
0
255075
100
125
150
175
AMBIENT TEMPERATURE (C)
POWER
DISSIPATION
(mW)
MA4T86500 (CHIP)
ON HEAT SINK
MA4T85635 (MICRO-X)
INFINITE HEAT SINK
MA4T85635 (MICRO-X)
FREE AIR
MA4T85635
NOMINAL GAIN vs FREQUENCY
at VCE - 8 VOLTS and IC = 20mA
0
5
10
15
20
25
30
100
1000
10000
FREQUENCY (MHz)
GAIN
(dB)
GTU (MAX)
MAG
|S21E|
2
MA4T85635
NOMINAL GAIN vs COLLECTOR CURRENT
at F = 1GHz and VCE = 8 VOLTS
8
9
10
11
12
13
14
15
16
17
18
110
100
COLLECTOR CURRENT (mA)
GAIN
(dB)
MAG
GTU (MAX)
|S21E|
2
MA4T856 SERIES POWER DISSIPATION
0
50
10 0
15 0
20 0
25 0
30 0
0
2 5
5 0
7 5
1 00
1 2 5
1 50
A M B I EN T TEM P E R A TU R E ( C )
POWER
DISSIPATION
(mW)
M A 4T 85633, 39 ( O D S - 1139, 35 M I C R O - X )
I N F I NI T E H E AT S I N K
M A 4T 85633, 39 ( O D S - 1139, 35 M I C R O - X )
F R EE A I R
MA4T85635
NOMINAL GAIN vs FREQUENCY
at VCE - 8 VOLTS and IC = 40mA
0
5
10
15
20
25
30
100
1000
10000
FREQUENCY (MHz)
GAIN
(dB)
GU (MAX)
GA (MAX)
|S21E|
2
MA4T85600
NOMINAL GAIN vs COLLECTOR CURRENT
at F=1GHz and VCE = 8 VOLTS
0
5
10
15
20
25
110
100
COLLECTOR CURRENT (mA)
GAIN
(dB)
GU (MAX)
|S21E|
2
相關(guān)PDF資料
PDF描述
MA4T85600 Si, RF POWER TRANSISTOR
MA4T85635 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MAT-02NBC 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MAT-02NBCG 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MAT-02NACG 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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