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參數(shù)資料
| 型號(hào)： | MA4T631039 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | MA4T631039 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
6
This Preliminary Specifications Data Sheet Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
V 2.00
3 Volt, Low Noise High f
T Silicon Transistor
MA4T6310 Series
P
1dB
(dBm)
0
3
3.5
0
25
50
75
100
125
150
175
2.5
2
1.5
1
0.5
Typical Performance Curves (Cont’d)
GAIN BANDWIDTH PRODUCT (f
T) VS
COLLECTOR CURRENT AT V
CE = 3 V
(MA4T631035)
DC CURRENT GAIN (h
FE) vs
COLLECTOR CURRENT AT V
CE = 3 V
(MA4T631035)
NOISE FIGURE AND ASSOCIATED
GAIN AT 1 GHz AND V
CE = 3 V
vs COLLECTOR CURRENT
(MA4T631035)
NOMINAL OUTPUT POWER AT THE
1 dB COMPRESSION POINT vs
COLLECTOR CURRENT V
CE = 3 V
(MA4T631035)
COLLECTOR CURRENT (mA)
GAIN
BAND
WIDTH
PR
ODUCT
(GHz)
COLLECTOR CURRENT (mA)
DC
CURRENT
GAIN
COLLECTOR CURRENT (mA)
NOISE
FIGURE
(dB)
ASSOCIA
TED
GAIN
(dB)
COLLECTOR CURRENT (mA)
1000
100
10
0
10
0
f=900 MHz
f=2 GHz
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
15
14
13
12
11
10
9
8
0.1
1
10
6.5
7
7.5
8
8.5
9
9.5
10
ASSOCIATED GAIN
NOISE FIGURE
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