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參數(shù)資料
| 型號： | MA4ST1320-1279T |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 55 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, CASE 1279, SC-79, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MA4ST1320-1279T |
Low Voltage/Low Rs Silicon Hyperabrupt Varactor Diode
MA4ST1300 Series
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 2.00
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
0.0
1.0
2.0
3.0
4.0
Biasing Voltage (V)
Series
Resistance
(Ohm)
Electrical Characteristics @ TA = +25 °C
Breakdown Voltage @ IR = 10
A, V
b = 12 V Minimum
Reverse Leakage Current @ VR =10V, IR = 100 nA Maximum
Part Number
Ct*
(pF)
Capacitance
Ratio
Rs**
(Ohm)
VR = 0.5V
VR = 4.0 V
Ct0.5/Ct3.0
VR = 2.0 V
Min.
Nom.
Max.
Typ.
Max.
MA4ST1320
48.0
55.0
63.0
17.0
3.37
0.32
0.5
MA4ST1330
22.0
25.0
30.0
7.8
3.31
0.45
0.7
MA4ST1340
15.0
18.0
21.0
5.2
3.4
0.57
0.85
MA4ST1350
9.5
11.0
13.5
3.6
3.2
0.78
1.0
* Capacitance @ 1 MHz
** Series Resistance @ 100 MHz
3
MA4ST1350
MA4ST1320
MA4ST1330
MA4ST1340
Typical Capacitance Change vs. Temperature
Typical Capacitance vs. Biasing Voltage
Series Resistance vs Biasing Voltage*
0
10
20
30
40
50
60
0
1
2
3
4
5
Biasing Voltage (V)
Capacitance
(pF)
MA4ST1320
MA4ST1330
MA4ST1340
-4%
-2%
0%
2%
4%
-40
-15
10
35
60
85
Temperature (degree C)
%
of
Capacitance
Change
(relative
to
25
C)
MA4ST1350
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