參數(shù)資料
型號(hào)： MA4FCS100M-1283T
元件分類： 射頻混頻器
英文描述： SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
文件頁數(shù)： 1/3頁
文件大?。?/td> 89K
代理商： MA4FCS100M-1283T
Solder Bump Silicon Flip Chip
Medium Barrier Schottky Diode
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
V1
MA4FCS100M-1283
Features
Low Series Resistance : 6.5
Low Capacitance : 95 fF
Sn 63/ Pb 37 Solder Bumps
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Automated Pick and Place Insertion
Extremely Small “30 x 15” mil Footprint
No Wirebonds Required
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16 hours)
Excellent Alternative to Beam Lead Schottkys
Description and Applications
The MA4FCS100M-1283 Flip Chip Diode is a Silicon
Medium Barrier Schottky Device fabricated with the
patented Heterolithic Microwave Integrated Circuit
(HMIC) process. The Flip Chip Diode employs a
6
m thick, Sn 63 / Pb 37 Solderable interface as
part of the 30
m high solder bump. HMIC circuits
consist of Silicon pedestals which form diodes or via
conductors embedded in a glass dielectric, which acts
as
the
low
dispersion,
microstrip
transmission
medium. The combination of silicon and glass allows
HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable
device.
The Flip Chip Schottky devices are excellent choices
for circuits requiring the small parasitics of a beam
lead device coupled with the superior mechanical
performance of a chip. The Flip Chip structure
employs very low resistance gold to connect the
Schottky contacts to the solder metalized mounting
pads on the top surface of the chip. These devices
are
reliable,
repeatable,
and
a
lower
cost
performance solution to conventional devices.
The
multi-layer
metalization
employed
in
the
fabrication of the Flip Chip Schottky junctions
includes a platinum diffusion barrier, which permits
all
devices
to
be
subjected
to
a
16-hour
non-operating stabilization bake at 300°C.
The extremely small “30 x 15” mil outline allows for
flip chip placement and multi-functional polarity
orientations.
(Topside View)
Dim
Inches
Millimeters
Min
Max
Min
Max
A
0.028
0.030
0.705
0.755
B
0.014
0.016
0.365
0.415
C
0.0040
0.0080
0.102
0.203
D
0.004
0.006
0.105
0.155
E
0.012
0.014
0.315
0.365
F
0.004
0.006
0.105
0.155
G
0.007
0.009
0.175
0.225
1283 Outline Drawing
(Circuit Side View)
A
B
G
D
E
F
C
The MA4FCS100M-1283 Flip Chip Medium Barrier
Schottky diodes are recommended for use in
microwave circuits through Ku band frequencies for
lower
power
applications
such
as
mixers,
sub-harmonic mixers, detectors and limiters. The
HMIC construction facilitates the direct replacement
of more fragile beam lead diodes with the
corresponding Flip Chip diode, which can be
connected to a hard or soft substrate circuit with
solder.
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