參數(shù)資料
型號(hào): MA4E976H-1012
元件分類: 射頻混頻器
英文描述: SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 61K
代理商: MA4E976H-1012
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
V3.00
Schottky Barrier Packaged
and Beam Lead Tees
MA4E20, MA4E970 Series
Features
q
Small Physical Size for Microstrip Mounting
q
High Reliability
q
Closely Matched Junctions for High Isolation
q
Three Diode Barrier Heights are Available
q
Minimum Parasitics for Broadband Designs
Description
Each Schottky barrier beam lead Tee consists of two close-
ly matched diodes connected in the classic Tee configura-
tion. The diodes are formed monolithically to assure close
matching of electrical characteristics such as capacitance,
forward voltage and series resistance. The silicon that
originally connected the diodes on the wafer is removed.
The beam lead construction assures minimum parasitic
capacitance, connecting lead inductance and permits the
interconnection of the diodes into Tees at the wafer level.
Three barrier levels are available allowing different levels
of local oscillator drive power. The L series features a low
barrier for applications which have low available local
oscillator power. Both medium barrier (M series) and high
barrier (H series) devices are available for applications
with higher drive levels. The RF and local oscillator fre-
quencies can range up to 18 GHz with selection of an
appropriate junction capacitance. Each series is available
in three case styles which are compatible with microstrip
or stripline assembly techniques. The 270 case style is her-
metically sealed and is suggested for harsh environments
or for military or high reliability circuits. The 272 case style
is a low cost plastic enclosure similar in case style. The
beam lead case styles 271 and 1012 are designed for max-
imum bandwidth. The case style 271 is a forward tee and
the 1012 is a reverse tee. The case style 1000 is the small-
est stripline package and has the lowest parasitic capaci-
tance and inductance.
Case Styles
Case Styles (See appendix for complete dimensions.)
Absolute Maximum Ratings at 25°C
Parameter
Absolute Maximum
Operating and Storage
Temperature Range
-65°C to +150°C
(Case Style 270, 271 and 1012)
-65°C to +125°C
(Case Styles 272, 1000)
Maximum Power Dissipation
(derate linearly to zero
allowable dissipation at 150°C)
75 mW/junction
Soldering Temperature
235°C for 10 sec. (Case Style 270)
150°C for 5 sec.
(Case Styles 271, 272)
Beam Strength
2g (Case Style 271, 1012)
271
1012
相關(guān)PDF資料
PDF描述
MA4E207M-1000 SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
MA4E974L-1000 SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
MA4P202-1088 SILICON, PIN DIODE
MA4P203-30 SILICON, PIN DIODE
MA44631B-30 K BAND, 20 GHz, SILICON, STEP RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MA4EX1201-1300 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs MMIC Double Balanced 11-15 GHz Mixer
MA4EX1201-1300T 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:GaAs MMIC Double Balanced 11-15 GHz Mixer
MA4EX180H-1225T 功能描述:上下轉(zhuǎn)換器 RoHS:否 制造商:Texas Instruments 產(chǎn)品:Down Converters 射頻:52 MHz to 78 MHz 中頻:300 MHz LO頻率: 功率增益: P1dB: 工作電源電壓:1.8 V, 3.3 V 工作電源電流:120 mA 最大功率耗散:1 W 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFP-128
MA4EX180M1-1225T 制造商:M/A-COM Technology Solutions 功能描述:RF MIXER
MA4EX180M-1225 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Double Balanced HMICTM Mixer, 1300 - 1900 MHz