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參數(shù)資料
| 型號： | MA4E2544L-1282W |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封裝： | CASE 1282, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | MA4E2544L-1282W |
SURMOUNTTM Low Barrier
Silicon Schottky Cross-Over Quad Series
Features
n
Extremely Low Parasitic Capitance and Inductance
n
Surface Mountable in Microwave Circuits, No
Wirebonds Required
n
Rugged HMIC Construction with Polyimide Scratch
Protection
n
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300
°C, 16 hours)
n
Lower Susceptibility to ESD Damage
Description
The MA4E2544L-1282 Series SurMount
TM
Low Barrier,
Silicon Schottky Cross-Over Quad Diodes are fabricated with
the
patented
Heterolithic
Microwave
Integrated
Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of silicon
and glass allows HMIC devices to have excellent loss and
power dissipation characteristics in a low profile, reliable
device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution
to
conventional
devices.
They
have
lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300
°C.
The “ 0505 ” outline allows for Surface Mount placement and
multi- functional polarity orientations.
Applications
The
MA4E2544L-1282
Series
SurMount
TM Low Barrier
Silicon Schottky Cross-Over Quad Diodes are recommended
for use in microwave circuits through Ku band frequencies for
lower power applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes with the
corresponding Surmount diode, which can be connected to a
hard or soft substrate circuit with solder.
V 1.00
Case Style 1282 - Topview
1
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
0.0445
0.0465
1.130
1.180
B
0.0445
0.0465
1.130
1.180
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.325
E
0.0128
0.0148
0.325
0.375
0.0148
0.375
Equivalent Circuit
MA4E2544L
-1282
A
B
C
D
E
D
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