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參數(shù)資料
| 型號(hào)： | MA4E204L-271 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, C-X BAND, MIXER DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | MA4E204L-271 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
V3.00
Schottky Barrier Packaged
and Beam Lead Tees
MA4E20, MA4E970 Series
Features
q
Small Physical Size for Microstrip Mounting
q
High Reliability
q
Closely Matched Junctions for High Isolation
q
Three Diode Barrier Heights are Available
q
Minimum Parasitics for Broadband Designs
Description
Each Schottky barrier beam lead Tee consists of two close-
ly matched diodes connected in the classic Tee configura-
tion. The diodes are formed monolithically to assure close
matching of electrical characteristics such as capacitance,
forward voltage and series resistance. The silicon that
originally connected the diodes on the wafer is removed.
The beam lead construction assures minimum parasitic
capacitance, connecting lead inductance and permits the
interconnection of the diodes into Tees at the wafer level.
Three barrier levels are available allowing different levels
of local oscillator drive power. The L series features a low
barrier for applications which have low available local
oscillator power. Both medium barrier (M series) and high
barrier (H series) devices are available for applications
with higher drive levels. The RF and local oscillator fre-
quencies can range up to 18 GHz with selection of an
appropriate junction capacitance. Each series is available
in three case styles which are compatible with microstrip
or stripline assembly techniques. The 270 case style is her-
metically sealed and is suggested for harsh environments
or for military or high reliability circuits. The 272 case style
is a low cost plastic enclosure similar in case style. The
beam lead case styles 271 and 1012 are designed for max-
imum bandwidth. The case style 271 is a forward tee and
the 1012 is a reverse tee. The case style 1000 is the small-
est stripline package and has the lowest parasitic capaci-
tance and inductance.
Case Styles
Case Styles (See appendix for complete dimensions.)
Absolute Maximum Ratings at 25°C
Parameter
Absolute Maximum
Operating and Storage
Temperature Range
-65°C to +150°C
(Case Style 270, 271 and 1012)
-65°C to +125°C
(Case Styles 272, 1000)
Maximum Power Dissipation
(derate linearly to zero
allowable dissipation at 150°C)
75 mW/junction
Soldering Temperature
235°C for 10 sec. (Case Style 270)
150°C for 5 sec.
(Case Styles 271, 272)
Beam Strength
2g (Case Style 271, 1012)
271
1012
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PDF描述 |
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| MA40414-135 | GALLIUM ARSENIDE, KA BAND, MIXER DIODE |
| MA4E400H-906 | SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MMSZ5237C | 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA4E2054 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Surface Mount Low Barrier Schottky Diode |
| MA4E2054_1 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Surface Mount Low Barrier Schottky Diode |
| MA4E20541-1141T | 功能描述:肖特基二極管與整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MA4E20541-1279 | 制造商:M/A-COM Technology Solutions 功能描述:MA4E20541-1279 |
| MA4E20541-1279T | 制造商:M/A-COM Technology Solutions 功能描述:SCHOTTKY DIODE - Tape and Reel 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE 制造商:M/A-COM Technology Solutions 功能描述:Diode Schottky 3V 0.02A 2-Pin SC-79 T/R |
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