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參數(shù)資料
| 型號： | MA40135 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封裝： | CASE 965, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 160K |
| 代理商： | MA40135 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
V3.00
Silicon Beam Lead
Schottky Barrier Diodes
MA40130 Series
Features
q
Planar Construction (Surface Oriented Diode)
q
Strong Beam Construction
q
Low Noise Figure (Mixer Diodes)
q
Low, Medium and High Barrier Diodes Available
Description
The MA40130 series of beam lead Schottky diodes has
both the Schottky junction and ohmic contact in the same
plane. This makes them convenient for bonding into
microstrip circuits. The Schottky junction is passivated
with silicon oxide and silicon nitride to give stable
reliable performance.
Case Style 965
Absolute Maximum Ratings at 25°C
Parameter
Absolute Maximum
Operating Temperature
-65°C to + 150°C
Storage Temperature
-65°C to + 150°C
Incident CW RF Power
75 mW
Incident RF Pulse Power
1W
(3ns pulse width, .001 duty cycle)
Beam Strength
2g
Notes:
1. C
j is measured at VR = 0V and F = 1.0 MHz.
2. V
F is measured at IF = 1.0 mA.
3. Series resistance, R
S, is determined by subtracting the junction
resistance, R
j from the measured value of 10 mA dynamic (slope)
resistance, R
T:
R
S = RT - Rj Ohms
Junction resistance is computed from:
R
J = 26/lF
I
F = 10 mA
I
F is the forward current in mA.
4. Noise figure measurements are performed on single diodes sampled
from every wafer lot. The noise figure specified is the maximum limit for
lot approval. The test conditions are as follows:
LO Power = 1.0 mW low and medium barrier, 2.0 mW for high barrier
LO Frequency — 9.375 GHz (X-Band)
16 GHz (Ku-Band)
I
F = 30 MHz
NF
IF = 1.5 dB
5. V
R is measured at IR = 10A
Electrical Specifications at 25°C
Maximum
1
Typical
2
Nominal
4
Junction
Forward
Minimum
5
Maximum
3
Noise
Capacitance
Voltage
Reverse
Resistance
Figure
Model
Barrier
Frequency
C
j
V
F
Voltage
R
S
NF
Number
Height
Band
(pF)
(Volts)
V
R
(Ohms)
(dB)
MA40132
Low
X
0.2
0.28
2
10
6.5
MA40131
Low
Ku
0.1
0.31
2
15
7.5
MA40133
Medium
Ku
0.1
0.41
3
15
7.5
MA40135
High
Ku
0.1
0.61
5
15
7.5
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