參數(shù)資料
型號: MA1150-M
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: Vertical Driver LSI for Video Camera CCD Area Image Sensor
中文描述: 15 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封裝: GLASS, DO-35, 2 PIN
文件頁數(shù): 11/11頁
文件大?。?/td> 67K
代理商: MA1150-M
For Video Equipment
MN3111H
Usage Notes
External components
1. This product requires eight Schottky barrier diodes and two Zener diodes.
We recommend the following components.
Schottky barrier diodes:
MA723 or equivalents
Zener diodes:
MA1150-M, MA8150-M (for positive regulated voltage) or equivalents
MA1100-M, MA8100-M (for negative regulated voltage) or equivalents
Ta=25C
Component
Model number
Typical characteristics
Notes
Schottky barrier diodes
MA723
I
F
=200mA, V
F
0.55V
MA1150-M
MA8150-M
MA1100-M
MA8100-M
I
Z
=5mA, 14.6V
V
Z
15.35V
for positive
regulated voltage
for negative
regulated voltage
Zener diodes
I
Z
=5mA, 9.75V
V
Z
10.25V
The MN3111H will not operate properly if the components do not satisfy the above specifications.
2. Always use the specified components for peripheral circuits so as to ensure that OV
EE
and V
L
do not reverse
potentials when the power is turned off.
As the above sketch illustrates, allowing OV
EE
to exceed V
L1
and V
L2
by more than 0.7 V produces the risk
of applying a forward bias to the PN junction, turning on the parasitic transistor, and generating an
overcurrent that produces latch-up.
If this phenomenon arises, increase the size of capacitor C7 or decrease the size of capacitor C13 to increase
the OV
EE
time constant.
(See the sample application circuit for the locations of C7 and C13.)
Normal operation
GND
OFF
V
L1
/V
L2
OV
EE
Faulty operation
0.7V or higher
Reversal
GND
OFF
V
L1
/V
L2
OV
EE
相關(guān)PDF資料
PDF描述
MA8100 Silicon planar type
MA81000H Silicon planar type
MA81000L Silicon planar type
MA81000M Silicon planar type
MA8150 Silicon planar type
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