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參數(shù)資料
| 型號(hào)： | MA113 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Switching Diodes |
| 中文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, SMINI2-F1, SC-76, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | MA113 |
Switching Diodes
MA2J113
Silicon epitaxial planar type
1
For switching circuits
I
Features
Small S-mini type package, allowing high-density mounting
Ensuring the average forward current capacity I
F(AV)
= 200 mA
High breakdown voltage (V
R
= 80 V)
I
Absolute Maximum Ratings
T
a
=
25
°
C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RM
I
F
80
V
Peak reverse voltage
80
V
Forward current (DC)
200
mA
Peak forward current
I
FM
600
mA
Non-repetitive peak forward
surge current
*
I
FSM
1
A
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R1
I
R2
V
R
=
15 V
V
R
=
75 V
V
R
=
75 V, T
a
=
100
°
C
I
F
=
200 mA
V
R
=
0 V, f
=
1 MHz
50
nA
500
nA
I
R3
V
F
C
t
100
μ
A
Forward voltage (DC)
1.1
V
Terminal capacitance
4
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
10
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Marking Symbol: 1D
Noe)
* : t = 1 s
1
2
K
A
0
0
1
±
0
0
±
0
0
±
0
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0.4
±
0.1
0
+
0
0
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
0.1
·
I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
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