- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380304 > MA1100-1 (Mitsubishi Electric Corporation) For DCS1800 - 30W Power Amplifier PDF資料下載
參數(shù)資料
| 型號： | MA1100-1 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | For DCS1800 - 30W Power Amplifier |
| 中文描述： | 對于DCS1800和- 30W功率功放 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 67K |
| 代理商： | MA1100-1 |
For Video Equipment
MN3111H
Application Circuit Example
48
37
38
39
40
41
42
43
44
45
46
47
ISUB
CH1
IV1
IV3
CH2
SENSE2
V
OUT–
V
IN –
GND
NC
NC
C4 –
1
2
3
4
5
6
7
8
9
1
1
1
O
E
C
G
C
C
C
C
C
V
C
C
O
D
H
3
3
3
3
3
3
3
2
2
2
2
2
V
E
V
H
O
V
L
V
L
O
V
M
O
O
V
M
O
V
H
13
14
15
16
17
18
19
20
21
22
23
24
V
DD
V
CC2
IV2
IV4
SENSE1
V
OUT+
NC
V
IN+
CAP3
CAP2
CAP1
TEST
D
D
C
C
D
C
R
D
C
D
C
D
R
C
C
R
D
*
*
D
D
C
D
C
<
+
<
–
<
–
<
–
C
R
C
t
f
s
R
t
t
P
C
R
R
C
C
5
R
C
C
D
C
D
C
C6
D
C
D
D
+
+
+
+
+
+
+
+
f
g
Zener diode
Schottky barrier diode
Diode with V
F
=0.7V
+
+
+
+
+
+
f
MN3111H
The booster circuit's electrolytic capacitors must have little impedance fluctuation at low temperatures.
Note *1: These diodes must have a V
F
of 0.7 V. All other diodes, except the Zener diodes, must be
Schottky barrier diodes (MA723).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MA121 | Silicon epitaxial planar type |
| MA6X121 | Silicon epitaxial planar type |
| MA122 | Silicon epitaxial planar type |
| MA6X122 | Silicon epitaxial planar type |
| MA128 | Silicon epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA1100-M | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Vertical Driver LSI for Video Camera CCD Area Image Sensor |
| MA11021 | 制造商:Square D by Schneider Electric 功能描述:CIRCUIT BREAKER SHUNT TRIP 120-240V AC |
| MA11027 | 制造商:Schneider Electric 功能描述:CIRCUIT BREAKER SHUNT TRIP 24V DC |
| MA11028 | 制造商:Schneider Electric 功能描述:CIRCUIT BREAKER SHUNT TRIP 48V DC |
| MA11029 | 制造商:Schneider Electric 功能描述:CIRCUIT BREAKER SHUNT TRIP 125V DC |
發(fā)布緊急采購，3分鐘左右您將得到回復。