參數(shù)資料
型號: M93S56-WBN3TG
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
中文描述: 4Kbit,2Kbit和1Kbit 16位寬MICROWIRE串行EEPROM的訪問與街區(qū)保護(hù)
文件頁數(shù): 16/34頁
文件大?。?/td> 525K
代理商: M93S56-WBN3TG
M93S66, M93S56, M93S46
16/34
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 4. Absolute Maximum Ratings
Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
)
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
See note
1
°C
V
OUT
Output range (Q = V
OH
or Hi-Z)
–0.50
V
CC
+0.5
V
V
IN
Input range
–0.50
V
CC
+1
V
V
CC
Supply Voltage
–0.50
6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–4000
4000
V
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