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參數(shù)資料
| 型號： | M93C-76RBN7P |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| 中文描述： | 16Kbit，8Kbit，4Kbit，2Kbit和1Kbit（8位或16位寬）MICROWIRE串行EEPROM的訪問 |
| 文件頁數(shù)： | 9/31頁 |
| 文件大?。?/td> | 182K |
| 代理商： | M93C-76RBN7P |
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M93C86, M93C76, M93C66, M93C56, M93C46
Read
The Read Data from Memory (READ) instruction
outputs data on Serial Data Output (Q). When the
instruction is received, the op-code and address
are decoded, and the data from the memory is
transferred to an output shift register. A dummy 0
bit is output first, followed by the 8-bit byte or 16-
bit word, with the most significant bit first. Output
data changes are triggered by the rising edge of
Serial Clock (C). The M93Cx6 automatically incre-
ments the internal address register and clocks out
the next byte (or word) as long as the Chip Select
Input (S) is held High. In this case, the dummy 0 bit
is notoutput between bytes (or words) and a con-
tinuous stream of data can be read.
Erase/Write Enable and Disable
The Erase/Write Enable (EWEN) instruction en-
ables the future execution of erase or write instruc-
tions, and the Erase/Write Disable (EWDS)
instruction disables it. When power is first applied,
the M93Cx6 initializes itself so that erase and write
instructions are disabled. After an Erase/Write En-
able (EWEN) instruction has been executed, eras-
ing and writing remains enabled until an Erase/
Write Disable (EWDS) instruction is executed, or
until V
CC
falls below the power-on reset threshold
voltage. To protect the memory contents from ac-
cidental corruption, it is advisable to issue the
Erase/Write Disable (EWDS) instruction after ev-
ery write cycle. The Read Data from Memory
(READ) instruction is not affected by the Erase/
Write Enable (EWEN) or Erase/Write Disable
(EWDS) instructions.
Figure 4. READ, WRITE, EWEN, EWDS Sequences
Note: For the meanings of An, Xn, Qn and Dn, see
Table 5.
,
Table 6.
and
Table 7.
.
AI00878C
1 1 0 An
A0
Qn
Q0
DATA OUT
D
S
Q
READ
S
WRITE
ADDR
OP
CODE
1 0
An
A0
DATA IN
D
Q
OP
CODE
Dn
D0
1
BUSY
READY
S
ERASE
WRITE
ENABLE
1
0
Xn X0
D
OP
CODE
1
0
1
S
ERASE
WRITE
DISABLE
1
0
Xn X0
D
OP
CODE
0
0
0
CHECK
STATUS
ADDR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93C-76RDS3T | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-76RMN6P | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-76WBN6 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-76WBN7P | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-76WDS3T | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93C-76RDS3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-RDW3TP/K | 功能描述:EEPROM MICROWIRE 8KB 8TSSOP 制造商:stmicroelectronics 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K（512 x 8 或 256 x 16） 速度:2MHz 接口:Microwire 3 線串行 電壓 - 電源:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 125°C（TA） 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標(biāo)準(zhǔn)包裝:1 |
| M93C76-RDW6TP | 功能描述:電可擦除可編程只讀存儲器 1.8 V to 5.5 V MSA Access EEProm RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-RMN3TP/K | 功能描述:EEPROM MICROWIRE 8KB 8SOIC 制造商:stmicroelectronics 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K（512 x 8 或 256 x 16） 速度:2MHz 接口:Microwire 3 線串行 電壓 - 電源:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 125°C（TA） 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| M93C-76RMN6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
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