參數(shù)資料
型號(hào)： M8813F3W-15T1
廠商： STMICROELECTRONICS
元件分類(lèi)： 微控制器/微處理器
英文描述： 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52
封裝： PLASTIC, QFP-52
文件頁(yè)數(shù)： 54/85頁(yè)
文件大?。?/td> 601K
代理商： M8813F3W-15T1
M88 FAMILY
58/85
Table 43B. DC Characteristics (3 V Range)
(TA = 0 to 70 °C; VCC = 2.7 V to 3.6 V)
Note: 1. Reset input has hysteresis. VIL1 is valid at or below 0.2VCC –0.1. VIH1 is valid at or above 0.8VCC .
2. CSI deselected or internal PD is active.
3. PLD is in non-turbo mode, and none of the inputs are switching.
4. Please see Figure 37 for the PLD current calculation.
5. IOUT =0 mA
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
All Speeds
2.7
3
3.6
V
VIH
High Level Input Voltage
2.7 V < VCC < 3.6 V
0.7VCC
VCC +0.5
V
VIL
Low Level Input Voltage
2.7 V < VCC <3.6 V
–0.5
0.8
V
VIH1
Reset High Level Input Voltage (Note 1)
0.8VCC
VCC +0.5
V
VIL1
Reset Low Level Input Voltage
(Note 1)
–0.5
0.2VCC –0.1
V
VHYS
Reset Pin Hysteresis
0.3
V
VLKO
VCC (min) for Flash Erase and
Program
1.9
2.2
V
VOL
Output Low Voltage
IOL =20 A, VCC = 2.7 V
0.01
0.1
V
IOL = 4 mA, VCC = 2.7 V
0.15
0.45
V
VOH
Output High Voltage Except
VSTBY On
IOH =–20 A, VCC = 2.7 V
2.9
2.99
V
IOH = –1 mA, VCC = 2.7 V
2.4
2.6
V
VOH1
Output High Voltage VSTBY On IOH1 =1 AVSTBY – 0.8
V
VSTBY
SRAM Stand-by Voltage
2.0
VCC
V
ISTBY
SRAM Stand-by Current
VCC =0 V
0.5
1
A
IIDLE
Idle Current (VSTBY Pin)
VCC >VSTBY
–0.1
0.1
A
VDF
SRAM Data Retention Voltage
Only on VSTBY
2V
ISB
Stand-by Supply Current
for Power Down Mode
CSI >VCC –0.3 V (Notes
2,3)
25
100
A
ILI
Input Leakage Current
VSS <VIN <VCC
–1
±.1
1
A
ILO
Output Leakage Current
0.45 < VIN >VCC
–10
±510
A
ICC (DC)
(Note 5)
Operating
Supply
Current
PLD Only
PLD_TURBO = OFF,
f = 0 MHz (Note 3)
Please see Figure 37
PLD_TURBO = ON,
f= 0 MHz
200
400
A/PT
FLASH or
EEPROM
During Flash or EEPROM
Write/Erase Only
10
25
mA
Read Only, f = 0 MHz
0
mA
SRAM
f = 0 MHz
0
mA
ICC (AC)
(Note 5)
PLD AC Base
Please see Figure 37
FLASH or EEPROM AC Adder
2
2.5
mA/
MHz
SRAM AC Adder
0.8
1.5
mA/
MHz
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