參數(shù)資料
型號: M81700FP
廠商: Mitsubishi Electric Corporation
英文描述: HIGH VOLTAGE HALF BRIDGE DRIVER
中文描述: 高壓半橋驅(qū)動
文件頁數(shù): 3/5頁
文件大小: 50K
代理商: M81700FP
Mar. 2002
PRELIMINARY
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTORS <HVIC>
M81700FP
HIGH VOLTAGE HALF BRIDGE DRIVER
μ
A
mA
mA
μ
A
V
V
V
V
V
V
V
V
V
V
μ
A
μ
A
V
V
μ
s
V
V
μ
s
A
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13.8
6.0
1.4
6.0
1.4
7.5
0.1
7.5
0.1
0.4
0.75
14.4
8.4
6.8
3.1
2.4
8.4
6.8
3.1
2.4
75
8.6
0.4
10
8.6
0.4
10
2.5
2.5
10
2.5
1
0.7
1.5
10
0.1
9.5
4.1
9.5
4.1
150
1.0
9.7
0.7
9.7
0.7
13
3
350
330
60
30
350
330
60
30
30
30
350
Floating Supply Leakage Current
VBS standby Current
VCC standby Current
VDD standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
Shutdown High Level Input Threshold Voltage
Shutdown Low Level Input Threshold Voltage
Shutdown High Level Input Threshold Voltage
Shutdown Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Reset Voltage
VBS Supply UV Hysteresis Voltage
VBS Supply UV Filter Time
VCC Supply UV Reset Voltage
VCC Supply UV Hysteresis Voltage
VCC Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On resistance
Output Low Level On resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
Shutdown Propagation Delay
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
VB=VS=600V
IO=0A, LO, HO
IO=0A, LO, HO
HIN, LIN
HIN, LIN
HIN, LIN (VDD=5V)
HIN, LIN (VDD=5V)
SD
SD
SD (VDD=5V)
SD (VDD=5V)
VIN=15V
VIN=0V
VO=0V, VIN=15V, PW<10
μ
s
VO=15V, VIN=0V, PW<10
μ
s
IO=
200mA, ROH=(VOH-VO)/IO
IO=200mA, ROL=VO/IO
CL=1000pF between HO
VS
CL=1000pF between HO
VS
CL=1000pF between HO
VS
CL=1000pF between HO
VS
CL=1000pF between LO
GND
CL=1000pF between LO
GND
CL=1000pF between LO
GND
CL=1000pF between LO
GND
|tdLH(HO)-tdLH(LO)|
|tdHL(HO)-tdHL(LO)|
CL=1000pF between HO
VS
CL=1000pF between LO
GND
IFS
IBS
ICC
IDD
VOH
VOL
VIH15
VIL15
VIH5
VIL5
VISDH15
VISDL15
VISDH5
VISDL5
IIH
IIL
VBSuvr
VBSuvh
tVBSuv
VCCuvr
VCCuvh
tVCCuv
IOH
IOL
ROH
ROL
tdLH(HO)
tdHL(HO)
trH
tfH
tdLH(LO)
tdHL(LO)
trL
tfL
tdLH
tdHL
tSD
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, VCC=VBS (=VB–VS)=VDD=15V, LGND=0V unless otherwise specified)
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