VCC DC Supply Voltage" />
參數(shù)資料
型號(hào): M74VHC1GT50DTT1G
廠商: ON Semiconductor
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 0K
描述: IC BUFF CMOS LVL/SFTR N-I 5TSOP
標(biāo)準(zhǔn)包裝: 1
系列: 74VHC
邏輯類型: 緩沖器/線路驅(qū)動(dòng)器,非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 1
輸出電流高,低: 8mA,8mA
電源電壓: 1.65 V ~ 5.5 V
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSOP(0.059",1.50mm 寬)5 引線
供應(yīng)商設(shè)備封裝: 5-TSOP
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁(yè)面: 1121 (CN2011-ZH PDF)
其它名稱: M74VHC1GT50DTT1GOSDKR
MC74VHC1GT50
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.5 to 7.0
0.5 to VCC + 0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC88A, TSOP5
200
mW
qJA
Thermal resistance
SC88A, TSOP5
333
°C/W
TL
Lead temperature, 1 mm from case for 10 secs
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22A114A
2. Tested to EIA/JESD22A115A
3. Tested to JESD22C101A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
1.65
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.0
5.5
VCC
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
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