參數(shù)資料
型號： M700000001
廠商： Spansion Inc.
英文描述： 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
中文描述： 2 × 64兆位（8米× 16位）的CMOS 3.0伏特，只有頁面模式閃存數(shù)據(jù)存儲128兆位（8米× 16位）的CMOS
文件頁數(shù)： 98/128頁
文件大小： 918K
代理商： M700000001
96
Am70PDL127BDH/Am70PDL129BDH
November 25, 2003
A D V A N C E I N F O R M A T I O N
The write-buffer programming operation can be sus-
pended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
■
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
■
Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
■
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
V
HH
on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V
HH
for operations
other than accelerated programming, or device dam-
age may result. In addition, no external pullup is nec-
essary since the WP#/ACC pin has internal pullup to
V
CC
.
Figure 5 illustrates the algorithm for the program oper-
ation. Refer to the
Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M700000002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
M700000003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
M7000-TW0D 制造商:Denon Electronics 功能描述:MISSION 702 TWEETER
M7002NND03 制造商:WILLAS 制造商全稱:WILLAS 功能描述:WBFBP-03B Plastic-Encapsulate MOSFETS
M7002TTD03 制造商:WILLAS 制造商全稱:WILLAS 功能描述:WBFBP-03A Plastic-Encapsulate MOSFETS
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