參數(shù)資料
型號(hào): M700000000
廠商: Spansion Inc.
英文描述: 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
中文描述: 2 × 64兆位(8米× 16位)的CMOS 3.0伏特,只有頁面模式閃存數(shù)據(jù)存儲(chǔ)128兆位(8米× 16位)的CMOS
文件頁數(shù): 114/128頁
文件大?。?/td> 918K
代理商: M700000000
112
Am70PDL127BDH/Am70PDL129BDH
November 25, 2003
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
V
CC
.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
11
μs
Per Word
Typ
22
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
8.8
μs
Per Word
Typ
17.6
μs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
100
μs
Word
100
Single Word/Byte Accelerated
Programming Operation (Note 2, 5)
Byte
Typ
90
Word
90
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
110
ns
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M700000001 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
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M700000003 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
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