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參數(shù)資料
| 型號： | M68AW512ML55ND1T |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 8兆位（為512k × 16）3.0V異步SRAM |
| 文件頁數(shù)： | 7/19頁 |
| 文件大小： | 296K |
| 代理商： | M68AW512ML55ND1T |
7/19
M68AW512M
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for periods greater than 1 sec periods may
affect device reliability. Refer also to the STMicro-
electronics SURE Program and other relevant
quality documents.
Table 3. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Up to a maximum operating V
CC
of 3.6V only.
Symbol
Parameter
Value
Unit
I
O (1)
Output Current
20
mA
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
CC
Supply Voltage
–0.5 to 4.6
V
V
IO (2)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation
1
W
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| M68AW512ML70ND6T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512MN55ND1T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M68AW512ML55ND6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML70ND1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML70ND6 | 功能描述:靜態(tài)隨機存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M68AW512ML70ND6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512MN55ND1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
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