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參數(shù)資料
| 型號(hào)： | M68AW511AL55NC1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（為512k × 8）3.0V異步SRAM |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 132K |
| 代理商： | M68AW511AL55NC1T |
11/18
M68AW511A
Write Mode
The M68AW511A is in the Write mode whenever
the W and E pins are Low. Either the Chip Enable
input (E) or the Write Enable input (W) must be de-
asserted during Address transitions for subse-
quent write cycles. Write begins with the concur-
rence of Chip Enable being active with W low.
Therefore, address setup time is referenced to
Write Enable and Chip Enable as t
AVWL
and t
AVEH
respectively, and is determined by the latter occur-
ring edge.
The Write cycle can be terminated by the earlier
rising edge of E, or W.
if the Output is enabled (E = Low and G = Low),
then W will return the outputs to high impedance
within t
WLQZ
of its falling edge. Care must be taken
to avoid bus contention in this type of operation.
Data input must be valid for t
DVWH
before the ris-
ing edge of Write Enable, or for t
DVEH
before the
rising edge of E, whichever occurs first, and re-
main valid for t
WHDX
or t
EHDX
.
Figure 10. Write Enable Controlled, Write AC Waveforms
AI03037
tAVAV
tWHAX
tDVWH
DATA INPUT
A0-A18
E
W
DQ0-DQ7
VALID
tAVWH
tAVEL
tWLWH
tAVWL
tWLQZ
tWHDX
tWHQX
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PDF描述 |
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| M68AW511AL55NC6T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC6T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70NC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68AW511AL55NC6 | 制造商:STME 功能描述: |
| M68AW511AL55NC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC1U | 功能描述:RAM其它 4M (512Kx8) 70ns RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| M68AW511AL70MC6T | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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