參數資料
型號: M68AW031AL70MS6U
廠商: 意法半導體
英文描述: CLAMP
中文描述: 256千位(32K的× 8)3.0V異步SRAM
文件頁數: 13/20頁
文件大?。?/td> 147K
代理商: M68AW031AL70MS6U
13/19
M68AW031A
Table 8. Write Mode AC Characteristics
Note: 1. At any given temperature and voltage condition, t
WLQZ
is less than t
WHQX
for any given device.
2. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
Symbol
Parameter
M68AW031A
Unit
70
t
AVAV
Write Cycle Time
Min
70
ns
t
AVEH
Address Valid to Chip Enable High
Min
60
ns
t
AVEL
Address valid to Chip Enable Low
Min
0
ns
t
AVWH
Address Valid to Write Enable High
Min
60
ns
t
AVWL
Address Valid to Write Enable Low
Min
0
ns
t
DVEH
Input Valid to Chip Enable High
Min
30
ns
t
DVWH
Input Valid to Write Enable High
Min
30
ns
t
EHAX
Chip Enable High to Address Transition
Min
0
ns
t
EHDX
Chip enable High to Input Transition
Min
0
ns
t
ELEH
Chip Enable Low to Chip Enable High
Min
60
ns
t
ELWH
Chip Enable Low to Write Enable High
Min
60
ns
t
WHAX
Write Enable High to Address Transition
Min
0
ns
t
WHDX
Write Enable High to Input Transition
Min
0
ns
t
WHQX (1)
Write Enable High to Output Transition
Min
5
ns
t
WLEH
Write Enable Low to Chip Enable High
Min
60
ns
t
WLQZ (1,2)
Write Enable Low to Output Hi-Z
Max
25
ns
t
WLWH
Write Enable Low to Write Enable High
Min
60
ns
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M68AW031AL70NS6U 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32K x8) 3.0V Asynchronous SRAM