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參數(shù)資料
| 型號： | M68AF511AM55NC1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| 中文描述： | 4兆位（為512k × 8），5V的異步SRAM |
| 文件頁數(shù)： | 7/18頁 |
| 文件大?。?/td> | 129K |
| 代理商： | M68AF511AM55NC1T |
7/18
M68AF511A
Table 4. Capacitance
Note: 1. Sampled only, not 100% tested.
2. At T
A
= 25°C, f = 1MHz, V
CC
= 5.0V.
Table 5. DC Characteristics
Note: 1. Average AC current, cycling at t
AVAV
minimum.
2. E = V
IL
, V
IN
= V
IH
or V
IL
.
3. E
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
– 0.2V.
4. Output disable.
Symbol
Parameter
(1,2)
Test
Condition
Min
Max
Unit
C
IN
Input Capacitance on all pins (except DQ)
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
CC1 (1,2)
Operating Supply Current
V
CC
= 5.5V
,
f = 1/t
AVAV
,
I
OUT
= 0mA
55
mA
I
CC2 (3)
Operating Supply Current
V
CC
= 5.5V
,
f = 1MHz
,
I
OUT
= 0mA
5
mA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
–1
1
μA
I
LO (4)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
–1
1
μA
I
SB
Standby Supply Current CMOS
V
CC
= 5.5V
,
E
≥
V
CC
– 0.2V
,
f = 0
5
10
μA
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input Low Voltage
–0.3
0.8
V
V
OH
Output High Voltage
I
OH
= –1.0mA
2.4
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
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| M68AF511AM55NC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8), 5V Asynchronous SRAM |
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