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參數(shù)資料
| 型號： | M68AF511AL55NC1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| 中文描述： | 4兆位（為512k × 8），5V的異步SRAM |
| 文件頁數(shù)： | 17/18頁 |
| 文件大?。?/td> | 129K |
| 代理商： | M68AF511AL55NC1T |
17/18
M68AF511A
REVISION HISTORY
Table 13. Document Revision History
Date
Version
Revision Details
July 2001
-01
First Issue
08-Aug-2001
-02
SO32 Package added
55ns Speed class introduced
Industrial Temperature Range added (Range 6)
27-Sep-2001
-03
Typing error, Table 4, Note 2
18-Oct-2001
-04
SO32 Package Mechanical and Data added
29-Nov-2001
-05
Note Removed from Ordering Information Scheme
08-Jan-2002
-06
PDIP32 package added
Document fully revised
08-Feb-2002
-07
t
ELQX
, t
AXQX
changed in Read and Standby Mode AC Characteristics Table (Table 7)
t
DVEH
, t
DVWH
, t
WLWH
changed in Write Mode AC Characteristics Table (Table 8)
25-Feb-2002
-08
PDIP32 package removed
Block Diagram clarified (Figure 4)
Absolute Maximum Ratings table clarified (Table 2)
Operating and AC Measurement Conditions table and figure clarified (Table 3, Figure 6)
DC Characteristics table clarified (Table 5)
Read and Standby Mode AC Characteristics table clarified (Table 7)
Write Mode AC Characteristics table clarified (Table 8)
03-Mar-2002
-09
Operating and AC Measurement Conditions table clarified (Table 3)
I
CCDR
Test Condition clarified (Table 9)
25-Mar-2002
-10
Read and Standby Mode AC Characteristics clarified (Table 7)
Low V
CC
Data Retention Characteristics clarified (Table 9)
18-Apr-2002
-11
Read and Standby Mode AC Characteristics (Table 7): t
PD
and t
PU
clarified
26-Apr-2002
-12
DC Characteristics Table clarified (Table 5)
Write Mode AC Characteristics Table clarified (Table 8)
17-May-2002
-13
I
SB
and I
CCDR
values clarified
02-Oct-2002
13.1
Revision numbering modified: a minor revision will be indicated by incrementing the digit
after the dot, and a major revision, by incrementing the digit before the dot (revision
version 013 equals 13.0).
New part number added.
09-Oct-2002
13.2
Datasheet number simplified.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M68AF511AL55NC6T | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| M68AF511AL70MC1T | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| M68AF511AM55NC1T | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| M68AF511AM70NC1T | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| M68AF511AM70MC6T | 4 Mbit (512K x8), 5V Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68AF511AL55NC6 | 功能描述:RAM其它 4M (512Kx8) 55ns RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| M68AF511AL55NC6T | 功能描述:靜態(tài)隨機(jī)存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M68AF511AL70MC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8), 5V Asynchronous SRAM |
| M68AF511AL70MC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8), 5V Asynchronous SRAM |
| M68AF511AL70NC1 | 制造商:STMicroelectronics 功能描述: |
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