參數(shù)資料
型號: M68AF031A
廠商: 意法半導(dǎo)體
英文描述: 256 Kbit (32K x 8) 5.0V Asynchronous SRAM(256 K位 (32K x 8),5.0V,異步SRAM)
中文描述: 256千位(32K的× 8)5.0V異步SRAM(256畝位(32K的× 8)和5.0V,異步靜態(tài)存儲器)
文件頁數(shù): 14/20頁
文件大小: 162K
代理商: M68AF031A
M68AF031A
14/20
Figure 15. Low V
CC
Data Retention AC Waveforms
Table 9. Low V
CC
Data Retention Characteristics
Symbol
Parameter
Note: 1. All other Inputs at V
IH
V
CC
–0.2V or V
IL
0.2V.
2. Tested initially and after any design or process changes that may affect these parameters. t
AVAV
is Read cycle time.
3. No input may exceed V
CC
+0.2V.
Test Condition
Min
Typ
Max
Unit
I
CCDR (1)
Supply Current (Data Retention)
V
CC
= 2.0V,
E
V
CC
–0.2V, f = 0
(3)
6
μA
t
CDR (1,2)
Chip Deselected to Data Retention
Time
0
ns
t
R (2)
Operation Recovery Time
t
AVAV
ns
V
DR (1)
Supply Voltage (Data Retention)
E
V
CC
–0.2V, f = 0
2.0
V
AI05925
DATA RETENTION MODE
tR
5.5V
tCDR
VCC 4.5V
VDR > 2.0V
E
E
VDR – 0.2V
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