參數(shù)資料
型號: M63850FP
元件分類: JFETs
英文描述: 1.5 A, 3 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/5頁
文件大小: 49K
代理商: M63850FP
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63850P/FP
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V
Parameter
4.5
0
Limits
min
typ
max
Symbol
Unit
VDD
VDS
Supply voltage
Drain-source voltage
“H” input voltage
“L” input voltage
Drain current
(Current per 1 circuit when 4
circuits are coming on simul-
taneously)
IDS
0
VCC-1.0
0
5.0
5.5
80
1.25
0.7
VCC
VCC-3.0
A
V
VIH
VIL
VDD = 5V, Duty Cycle
P
: no more than 4%
FP : no more than 2%
VDD = 5V, Duty Cycle
P
: no more than 36%
FP : no more than 15%
TIMING DIAGRAM
Note 1 : TEST CIRCUIT
INPUT
50%
OUTPUT
ton
toff
PG
INPUT
VDD
OUTPUT
VO
RL
OPEN
CL
50
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 5V
(2)Input-output conditions : RL = 8.3
, Vo = 10V, VDD = 4.5V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes.
Measured
device
ns
45
125
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (Note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
130
0.45
0.9
0.72
–130
1.3
IDD(ON)
IDD(OFF)
IO(LEAK)
VON
RON
IIH
IIL
IR
VF
A
V
A
V
300
10
0.72
1.44
1.15
10
–300
10
2.0
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
On supply current
Off supply current
Output leak current
Output on voltage
Output on resistance
“H” input current
“L” input current
Clamping diode reverse current
Clamping diode forward voltage
VDD = 5.5V, VI = 0V, 1 circuit only
VDD = 5.5V, VI = 5.5V
VDD = 5.5V, VI = 5.5V, VDS = 80V
VI = 4.5V, IDS = 0.7A
VI = 4.5V, IDS = 1.25A
VDD = 5.5V, VI = 5.5V
VDD = 5.5V, VI = 0V
VR = 80V
IF = 1.25A
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Conditions
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
param
etric lim
its are
subject
to change.
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