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參數(shù)資料
| 型號： | M63813P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 16P4, 16 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | M63813P |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
ton
toff
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 3V
(2)Input-output conditions : RL = 220
, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
PG
50
RL
OUTPUT
INPUT
Vo
CL
OPEN
Measured device
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V (BR) CEO
VIN(on)
VF
IR
hFE
V
A
—
35
—
2.4
—
50
—
35
1.2
—
0.2
0.8
4.2
2.0
10
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10
A
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
VO
V
0
—
35
250
160
250
130
250
120
250
120
20
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
IC
VIN
Input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
M63813P
M63813FP
M63813GP
M63813KP
ns
—
125
250
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
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| M63820FP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M63814FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63814GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63814KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63814P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63815FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
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