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參數(shù)資料
| 型號(hào)： | M63802FP |
| 廠商： | POWEREX INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 16P2N-A, 16 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | M63802FP |
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
ton
toff
50%
OUTPUT
INPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 18V
(2)Input-output conditions : RL = 220
, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
PG
50
RL
OUTPUT
INPUT
Vo
CL
Measured device
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V (BR) CEO
VIN(on)
hFE
V
—
35
—
13
50
—
19
—
0.2
0.8
23
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
“On” input voltage
DC amplification factor
ICEO = 10
A
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
VO
V
0
—
35
250
160
250
130
250
120
250
120
30
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
IC
VIN
Input voltage
Collector current
(Current per 1 circuit
when 7 circuits are
coming on simulta-
neously)
M63802P
M63802FP
M63802GP
M63802KP
ns
—
140
240
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
POWEREX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M63803P | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63803FP | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63803KP | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63803GP | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63803P | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M63802GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY |
| M63802KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY |
| M63802P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY |
| M638032-15E1 | 功能描述:RAM其它 DISC BY STM 3/01 32KX8 CMOS SRAM 15NS RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| M638032-20E1 | 功能描述:RAM其它 DISC BY STM 3/02 32KX8 CMOS SRAM 20NS RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
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