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參數(shù)資料
| 型號(hào)： | M5M5W816WG-70HI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 8388608位（524288字由16位）的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | M5M5W816WG-70HI |
MITSUBISHI ELECTRIC
M5M5W816WG - 70HI, 85HI
2001.6.11 Ver. 3.1
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
2
FUNCTION
The M5M5W816WG is organized as 524288-words by 16-bit.
These devices operate on a single +2.7~3.0V power supply,
and are directly TTL compatible to both input and output. Its
fully static circuit needs no clocks and no refresh, and
makes it useful.
The operation mode are determined by a combination of
the device control inputs BC1# , BC2# , S1#, S2 , W# and
OE#. Each mode is summarized in the function table.
A write operation is executed whenever the low level W#
overlaps with the low level BC1# and/or BC2# and the low
level S1# and the high level S2. The address(A0~A18) must
be set up before the write cycle and must be stable during
the entire cycle.
A read operation is executed by setting W# at a high level
and OE# at a low level while BC1# and/or BC2# and S1# and
S2 are in an active state(S1#=L,S2=H).
When setting BC1# at the high level and other pins are in
an active stage , upper-byte are in a selectable mode in
which both reading and writing are enabled, and lower-byte
are in a non-selectable mode. And when setting BC2# at a
high level and other pins are in an active stage, lower-byte
are in a selectable mode and upper-byte are in a non-
selectable mode.
When setting BC1# and BC2# at a high level or S1# at a high
level or S2 at a low level, the chips are in a non-selectable
mode in which both reading and writing are disabled. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by BC1#,
BC2# and S1#, S2.
The power supply current is reduced as low as 0.1μA(25°C,
typical), and the memory data can be held at +2.0V power
supply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.
BLOCK DIAGRAM
MEMORY ARRAY
524288 WORDS
x 16 BITS
CLOCK
GENERATOR
A
0
A
1
A
17
A
18
S2
BC1#
BC2#
W#
OE#
DQ
8
DQ
1
DQ
16
DQ
9
-
Vcc
GND
S1#
FUNCTION TABLE
Mode
Non selection
S2
W#
H
X
X
H
X
H
High-Z
High-Z High-Z
Din
Dout
High-Z High-Z
High-Z
High-Z
BC1# BC2#
OE#
DQ1~8
High-Z
X
X
X
X
Non selection
Non selection
Write
DQ9~16
High-Z Standby
Icc
High-Z Standby
Standby
H
H
H
H
H
X
L
H
X
L
L
H
H
L
H
L
L
L
H
H
H
H
H
L
L
High-Z
High-Z
Active
Active
Active
Active
Active
Read
H
H
H
L
L
L
Active
Active
H
L
High-Z
Din
High-Z
Active
H
L
H
X
H
High-Z
H
L
Dout
H
L
L
Read
Dout
Active
L
Write
Din
H
High-Z
Write
Read
Din
Dout
S1#
H
X
L
L
L
L
L
L
L
L
L
L
X
X
High-Z
X
X
Non selection
High-Z Standby
L
L
X
X
X
X
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M5W816WG-85HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85L | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85LI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5W816WG-70HI#SQ | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W816WG-70HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W817KT-70HI | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W817KT-70HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M80011A | 制造商:Mitsubishi Electric 功能描述: |
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