參數(shù)資料
型號(hào): M5M5V408BTP
廠商: Mitsubishi Electric Corporation
英文描述: Octal Buffers/Drivers With 3-State Outputs 20-TSSOP -40 to 85
中文描述: 4194304位(524288 - Word的8位)的CMOS靜態(tài)RAM
文件頁數(shù): 4/14頁
文件大小: 162K
代理商: M5M5V408BTP
MITSUBISHI ELECTRIC
M5M5V408BFP/TP/RT/KV/KR
revision-K1.0e, ' 98.09.07
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
4
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
pF
8
10
V
I
=GND, V
I
=25mVrms, f=1MHz
V
O
=
GND,V
O
=25mVrms, f=1MHz
C
I
C
O
Symbol
Parameter
Limits
Typ
Conditions
Units
μA
mA
μA
mA
V
Icc
1
Icc
2
Icc
4
V
IH
V
IL
V
OH1
V
OH2
V
OL
I
I
I
O
Icc
3
I
OH
= -0.5mA
I
OH
= -0.05mA
I
OL
=2mA
V
I
=0
~
Vcc
S=V
IH
or OE=V
IH,
V
I/O
=0
~
Vcc
S
0.2V
Other inputs
0.2V or
Vcc-0.2V
Vcc+0.3V
0.6
2.2
-0.3 *
2.4
Vcc-0.5V
0.5
0.4
±1
±1
40
7
40
7
48
30
5
30
5
-
12
3.6
-HW, -HI
Max
Min
DC ELECTRICAL CHARACTERISTICS
+70°C
+40 ~ +70°C
+25 ~ +40°C
0 ~ +25°C
1.2
0.3
0.3
0.3
f= 10MHz
f= 1MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating
temperature
Storage temperature
V
mW
°C
°C
Conditions
Ta=25°C
Standard
W-
version
I-
version
700
0 ~ +70
-20 ~ +85
-40 ~ +85
-65 ~150
Ratings
Vcc
V
I
V
O
P
d
T
a
T
stg
-0.5
*
~ +4.6
-0.5
*
~ Vcc + 0.5
0 ~ Vcc
Units
With respect to GND
With respect to GND
With respect to GND
f= 10MHz
f= 1MHz
+70 ~ +85°C
+70 ~ +85°C
-20 ~ +25°C
-40 ~ +25°C
-L, -LW, -LI
-H, -HW, -HI
-H
-HW
-HI
-LW, -LI
1
1.2
1.2
-
-
-
24
24
-
(-L, -H)
(-LW, -HW)
(-LI, -HI)
( Vcc=2.7 ~ 3.6V, unless otherwise noted)
High-level input voltage
Low-level input voltage
High-level output voltage 1
High-level output voltage 2
Low-level output voltage
Input leakage current
Output leakage current
Active supply current
( AC,MOS level )
Active supply current
( AC,TTL level )
Stand by supply current
( AC,MOS level )
( AC,TTL level )
Stand by supply current
Output-open
S=VIL
Other inputs=V
IH
or V
IL
Output-open
S=V ,Other inputs= 0 ~ Vcc
S
Vcc-0.2V
Other inputs=0~Vcc
* -3.0V in case of AC (Pulse width
30ns)
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for Vcc=3.0V and Ta=25°C
CAPACITANCE
(Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
Limits
Typ
Max
Min
Units
Input capacitance
Output capacitance
* -3.0V in case of AC (Pulse width
30ns)
相關(guān)PDF資料
PDF描述
M5M5V408BKR 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V416BTP-85HW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BRT-85HW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-85HW 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416WG-70LI 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M5V408BTP-10H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V408BTP-10HI 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V408BTP-10HW 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V408BTP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
M5M5V408BTP-10LI 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM