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參數(shù)資料
| 型號(hào)： | M5M5V108CVP-70XI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | M5M5V108CVP-70XI |
MITSUBISHI LSIs
M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI,
-70XI, -10XI
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
Write cycle ( S
1
control mode)
Write cycle (S
2
control mode)
t
su (S1)
(Note 3)
(Note 3)
t
rec (W)
t
h (D)
t
CW
(Note 5)
(Note 3)
(Note 3)
t
su (A)
(Note 4)
t
su (D)
t
h (D)
t
CW
(Note 5)
(Note 3)
(Note 3)
t
su (S2)
t
rec (W)
t
su (A)
(Note 4)
(Note 3)
(Note 3)
t
su (D)
DATA IN
STABLE
DATA IN
STABLE
DQ
1~8
S
1
S
2
W
A
0~16
DQ
1~8
S
1
S
2
W
A
0~16
Note 3: Hatching indicates the state is "don't care".
4: Writing is executed while S
2
high overlaps S
1
and W low.
5: When the falling edge of W is simultaneously or prior to the falling edge of S
1
or rising edge of S
2
, the outputs are maintained in the high impedance state.
6: Don't apply inverted phase signal externally when DQ pin is output mode.
6
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| M5M5V108CKR-10X | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108CKR-70H | 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5V108DFP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108DFP70H | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5V108DFP-70H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
| M5M5V108DFP-70H(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5V108DFP-70HBT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,1M bit,x8, |
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