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參數(shù)資料
| 型號： | M5M51R16AWG-15HI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（65536字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 89K |
| 代理商： | M5M51R16AWG-15HI |
MITSUBISHI LSIs
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51R16AWG -10LI, -12LI, -15LI,
-10HI, -12HI, -15HI
MITSUBISHI
ELECTRIC
Aug.1. 1998
Separate control of lower and upper bytes by BC1 and BC2
Package
48-pin chip scale package(CSP)
Ball pitch : 0.75mm
Package size: 7.0mm x 8.5mm
Easy memory expansion and power down by S,BC1 and BC2
Data hold on +1.0V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
DESCRIPTION
operation current and ideal for the battery back-up application.
The M5M51R16AWG is packaged in a 48-pin chip scale package
which is a high reliability and high density surface mount device
(SMD). Using this type of devices, it becomes very easy to design
a small system.
The M5M51R16AWG is fully compatible with the M5M51R16WG.
Single +1.8V~2.7V power supply
Low power down current 0.05μA(typ.)
Directly TTL compatible : All inputs and outputs
Common data I/O
APPLICATION
Small capacity memory units.
FEATURE
Access time
(max)
M5M51R16AWG- 10LI 100ns
M5M51R16AWG- 12LI 120ns
M5M51R16AWG- 15LI 150ns
Stand-by
(max)
Active
(max)
4μA
Power supply current
Type name
10mA
(1MHz)
M5M51R16AWG- 10HI 100ns
M5M51R16AWG- 12HI 120ns
M5M51R16AWG- 15HI 150ns
2μA
1
The M5M51R16AWG is a 1048576-bit CMOS static RAM
organized as 65536 words by 16-bits, which are fabricated using
high-performance CMOS technology. The use of CMOS cells and
periphery results in a high density and low power static RAM.
The M5M51R16AWG can achieve low stand-by current and low
PIN CONFIGURATION (TOP VIEW)
NC : NO CONNECTION
NC
A
0
A
3
A
5
OE
BC1
DQ
1
GND
S
GND
NC
BC2
A
2
A
1
A
6
A
7
DQ
2
DQ
4
DQ
16
DQ
15
DQ
14
DQ
13
DQ
3
V
CC
DQ
5
DQ
6
DQ
8
DQ
7
DQ
12
DQ
11
DQ
10
DQ
9
A
15
A
13
A
12
A
9
A
8
A
10
A
11
NC
W
A
4
GND
V
CC
NC
NC
NC
A
14
NC
A
0
A
3
A
5
OE
BC1
DQ
1
GND
S
GND
NC
BC2
A
2
A
1
A
6
A
7
DQ
2
DQ
4
DQ
16
DQ
15
DQ
14
DQ
13
DQ
3
V
CC
DQ
5
DQ
6
DQ
8
DQ
7
DQ
12
DQ
11
DQ
10
DQ
9
A
15
A
13
A
12
A
9
A
8
A
10
A
11
NC
W
A
4
V
CC
NC
NC
NC
A
14
Outline
48FJA
PIN CONFIGURATION (BOTTOM VIEW)
1
2
3
4
5
6
A
B
C
D
E
F
G
H
6
5
4
3
2
1
A
B
C
D
E
F
G
H
GND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M51R16AWG-15LI | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51R16AWG-10H | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51R16AWG-10L | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51R16AWG-12H | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51R16AWG-12L | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M51R16AWG-15L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51R16AWG-15LI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M5255DP-45LL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5255DP-45XL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5255DP-55LL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM |
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