參數(shù)資料
型號: M5M51016RT-12VLL-I
廠商: Mitsubishi Electric Corporation
英文描述: 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
中文描述: 1048576位(65536字由16位)的CMOS靜態(tài)RAM
文件頁數(shù): 7/7頁
文件大小: 75K
代理商: M5M51016RT-12VLL-I
MITSUBISHI LSIs
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51016BTP,RT-12VL,
-12VLL
(Ta = 0 ~ 70 , unless otherwise noted)
C
Symbol
Parameter
V
V
Max
Typ
Limits
Min
Test conditions
Unit
μA
0.2V
t
rec (PD)
2.7V
V
(3) POWER DOWN CHARACTERISTICS
BC control mode
CS control mode
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
2
50
2.0
0.6
0.2
-VLL
-VL
(Note 7)
0.3
Power down set up time
Power down recovery time
(2) TIMING REQUIREMENTS
(Ta = 0 ~ 70 , unless otherwise noted )
V
CC (PD)
V
I (BC)
V
I (CS)
I
CC (PD)
Power down supply voltage
Byte control input BC
1
& BC
2
Chip select input CS
Power down supply current
2.7V <
CC(PD)
V
CC(PD)
2.7V
V
CC
= 3V
1) CS 0.2V
other inputs = 0
~
3V
t
su (PD)
t
rec (PD)
Symbol
Parameter
ns
ms
Max
Typ
Limits
Min
0
5
Test conditions
Unit
2.7V
t
su (PD)
0.2V
2.0V
t
su (PD)
2.7V
2.7V
2.0V
t
rec (PD)
V
CC
BC
1
& BC
2
V
CC
CS
7
<
CS V
CC
0.2V,other inputs=0
~
3V
2) BC
1
& BC
2
Vcc 0.2V,
Note7. I
CC (PD)
= 1
μ
A in case of Ta = 25 C
C
BC
1
& BC
2
>
CC
0.2V
CS <
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