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參數(shù)資料
| 型號： | M5M51016BTP-10VLL-I |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（65536字由16位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 76K |
| 代理商： | M5M51016BTP-10VLL-I |
MITSUBISHI LSIs
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51016BTP,RT-10VL-I,
-10VLL-I
CS BC
1
BC
2
W
L
X
X
H
H
H
H
H
H
H
H
L
H
L
H
L
H
L
H
L
H
L
OE
X
X
X
L
H
X
L
H
X
L
H
Mode
Non selection
Non selection
DQ
1
~
8
DQ
9
~
16
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
(High-Z=High-impedance)
Stand-by
Stand-by
Active
Active
Active
Active
Active
Active
Active
Active
Active
I
CC
X
H
L
L
L
H
H
H
L
L
L
X
X
L
H
H
L
H
H
L
H
H
High-Z
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Upper-Byte Write
Upper-Byte Read
Lower-Byte Write
Lower-Byte Read
Word Write
Word Read
The operation mode of the M5M51016B series are determined by
a combination of the device control inputs BC
1
, BC
2
, CS, W and
OE. Each mode is summarized in the function table.
A write cycle is executed whenever the low level W overlaps with
the low level BC
1
and/or BC
2
and the high level CS. The address
must be set up before the write cycle and must be stable during
the entire cycle.
The data is latched into a cell on the trailing edge of W, BC
1
, BC
2
or CS, whichever occurs first, requiring the set-up and hold time
relative to these edge to be maintained. The output enable input
OE directly controls the output stage. Setting the OE at a high
level, the output stage is in a high-impedance state, and the
databus contention problem in the write cycle is eliminated.
A read cycle is executed by setting W at a high level and OE at a
low level while BC
1
and/or BC
2
and CS are in an active state.
(BC
1
and/or BC
2
=L,CS=H)
When setting BC
1
at a high level and the other pins are in an
active state, upper-Byte are in a selectable mode in which both
reading and writing are enabled, and lower-Byte are in a
non-selectable mode.And when setting BC
2
at a high level and the
other pins are in an active state, lower-Byte are in a selectable
mode and upper -Byte are in a non-selectable mode.
When setting BC
1
and BC
2
at a high level or CS at a low level,
the chips are in a non-selectable mode in which both reading and
writing are disabled.
In this mode, the output stage is in a high-impedance state,
allowing OR-tie with other chips and memory expansion by BC
1
,
BC
2
and CS. The power supply current is reduced as low as the
stand-by current which is specified as I
CC3
or I
CC4
, and the memory
data can be held at +2V power supply, enabling battery back-up
operation during powerfailure or power-down operation in the
non-selected mode.
A
1
9
A37
A64
A73
A12
A1441
A1540
A13 39
A837
A9 36
A
R
A0 10
A4 6
A2 8
A5 5
A10 34
A11 35
A
C
D
D
11
43
42
38
13
CS
BC1
BC2
W
OE
15DQ1
16DQ2
17DQ3
18 DQ4
19DQ5
20 DQ6
21 DQ7
22 DQ8
24DQ9
25DQ10
26DQ11
27DQ12
28DQ13
29DQ14
30DQ15
31DQ16
O
O
C
C
S
S
CLOCK
65536 WORDS x16 BITS
( 1024 ROWS
ADDRESS
INPUTS
CHIP SELECT
INPUT
CINPUTS
WRITE COINPUT
OUTPUT EINPUT
DATA
23Vcc
33GND(0V)
12 GND(0V)
BLOCK DIAGRAM
2
FUNCTION
A
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M51016RT-10L-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-10LL-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-10VLL-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-12VL | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016RT-12VLL | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M51016BTP-12VL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-12VL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-12VLL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-12VLL-I | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-70L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
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