參數(shù)資料
型號: M5M4V64S40ATP-8A
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
中文描述: 64M號(4銀行甲1048576字x 16位)同步DRAM
文件頁數(shù): 12/51頁
文件大小: 1084K
代理商: M5M4V64S40ATP-8A
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.3)
Mar'98
M5M4V64S40ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM
from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQM high and NOP condition at the inputs.
2. Maintain stable power, stable clock, and NOP input conditions for a minimum of 200μs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by
setting the mode register (MRS). The mode register stores these data
until the next MRS command, which may be issued when both banks
are in
@
idle state. After tRSC from a MRS command, the SDRAM is
ready for new command.
R: Reserved for Future Use
FP: Full Page
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
1
2
4
8
R
R
R
FP
BT= 1
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
WM
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
/CS
/RAS
/CAS
/WE
BA0,1 A11-A0
CLK
V
12
0
1
WRITE
MODE
BURST
SINGLE BIT
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