參數(shù)資料
型號(hào)： M5M467805BJ
廠商： Mitsubishi Electric Corporation
英文描述： EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
中文描述： 江戶模式67108864位（16777216 - Word的4位）動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù)： 12/39頁(yè)
文件大?。?/td> 403K
代理商： M5M467805BJ
MITSUBISHI
ELECTRIC
Jun. 1999
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
MITSUBISHI LSIs
(Rev. 1.1)
M5M467405/465405BJ,BTP -5,-6,-5S,-6S
M5M467805/465805BJ,BTP -5,-6,-5S,-6S
M5M465165BJ,BTP -5,-6,-5S,-6S
12
CAS before RAS Refresh Cycle
(Note 28)
Note 28: Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode.
EDO Mode Cycle (Read, Early Write, Read-Write, Read-Modify-Write Cycle,
Read Write Mix Cycle, Hi-Z control by OE or W)
(Note 25)
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
CAS setup time before RAS low
CAS hold time after RAS low
Read setup time before RAS low
t
CSR
t
CHR
t
RSR
t
RHR
Read hold time after RAS low
5
10
10
10
5
10
10
10
ns
ns
ns
ns
Min
Max
Min
Max
EDO mode read/write cycle time
EDO Mode read write / read modify write cycle time
RAS low pulse width for read write cycle
CAS high pulse width
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Hold time to maintain the data Hi-Z until CAS access
t
HPC
t
HPRWC
t
RAS
t
CP
t
CPRH
t
CPWD
t
CHOL
(Note26)
(Note27)
28
43
7
7
20
55
8
(Note24)
100000
13
33
50
7
7
25
66
10
100000
16
t
OEPE
t
WPE
t
HCWD
OE Pulse Width (Hi-Z control)
W Pulse Width (Hi-Z control)
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
7
28
7
32
ns
ns
ns
ns
ns
ns
ns
ns
Min
Max
Min
Max
ns
ns
5
5
t
DOH
Output hold time from CAS low
Delay time, CAS precharge to OE high after read
t
HAWD
t
HPWD
t
HCOD
t
HAOD
t
HPOD
40
43
13
47
50
15
25
28
30
33
ns
ns
ns
ns
ns
ns
65
77
Note 25: All previously specified timing requirements and switching characteristics are applicable to their respective EDO mode cycle.
26: t
RAS(min)
is specified as two cycles of CAS input are performed.
27: t
CP(max)
is specified as a reference point only. If t
CP
t
CP(max) ,
access time is controlled exclusively by tCAC.
M5M46X405B-5,5S
M5M46X805B-5,5S
M5M465165B-5,5S
M5M46X405B-6,6S
M5M46X805B-6,6S
M5M465165B-6,6S
M5M46X405B-5,5S
M5M46X805B-5,5S
M5M465165B-5,5S
M5M46X405B-6,6S
M5M46X805B-6,6S
M5M465165B-6,6S
相關(guān)PDF資料
PDF描述
M5M467805BTP-5 EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805BTP-5S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805BTP-6 EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805BTP-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805DJ EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M467805BTP-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805BTP-5S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805BTP-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805BTP-6S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M467805DJ 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
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