參數(shù)資料
型號: M5M467800BJ-5
廠商: Mitsubishi Electric Corporation
英文描述: FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
中文描述: 快速頁面模式67108864位(16777216 - Word的4位)動態(tài)隨機存儲器
文件頁數(shù): 24/37頁
文件大?。?/td> 246K
代理商: M5M467800BJ-5
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
MITSUBISHI LSIs
(Rev. 1.0)
M5M467400/465400DJ,DTP -5,-6,-5S,-6S
M5M467800/465800DJ,DTP -5,-6,-5S,-6S
M5M465160DJ,DTP -5,-6,-5S,-6S
MITSUBISHI ELECTRIC
Aug. 1999
24
Hidden Refresh Cycle (Read)
(Note 29)
Note 29: Early write, delayed write, read write, or read modify write cycle is applicable instead of read cycle.
Timing requirements and output state are the same as that of each cycle shown above.
RAS
W
OE
Address
DQ
1
DQ
4 (8,16)
(INPUTS)
DQ
1
DQ
4 (8,16)
(OUTPUTS)
LCAS / UCAS
(at M5M465160Dxx only)
CAS
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RC
V
IH
V
IL
t
CRP
t
RCD
t
CHR
t
RSH
t
CRP
t
RPC
V
IH
V
IL
t
ASR
t
RAH
t
CAH
t
RAD
t
ASR
ROW
ADDRESS
t
ASC
COLUMN
ADDRESS
V
IH
V
IL
t
RCS
t
RAL
t
RRH
V
IH
V
IL
t
RSR
t
RHR
t
DZC
Hi-Z
Hi-Z
t
RAC
t
AA
t
CAC
t
CLZ
t
CDD
t
OFF
DATA VALID
V
OH
V
OL
V
IH
V
IL
t
ORH
t
OEA
t
DZO
t
OEZ
t
ODD
V
IH
V
IL
Hi-Z
ROW
ADDRESS
相關(guān)PDF資料
PDF描述
M5M4V16169DTP 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-10 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-7 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DRT-8 22182053
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M5M467800BJ-6S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
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M5M467800BTP-5S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM