參數(shù)資料
型號(hào): M5M465165BTP-6
廠商: Mitsubishi Electric Corporation
英文描述: EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
中文描述: 江戶模式67108864位(16777216 - Word的4位)動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 7/39頁
文件大?。?/td> 403K
代理商: M5M465165BTP-6
MITSUBISHI
ELECTRIC
Jun. 1999
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
MITSUBISHI LSIs
(Rev. 1.1)
M5M467405/465405BJ,BTP -5,-6,-5S,-6S
M5M467805/465805BJ,BTP -5,-6,-5S,-6S
M5M465165BJ,BTP -5,-6,-5S,-6S
7
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
VI
V0
I0
Pd
Topr
Tstg
Storage temperature
Parameter
Conditions
Ratings
-0.5 4.6
-0.5 4.6
-0.5 4.6
50
1000
0 70
-65 150
Unit
V
V
V
mA
mW
C
C
With respect to Vss
Ta=25 C
Supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
RECOMMENDED OPERATING CONDITIONS
Unit
Limits
Nom
3.3
0
Min
3.0
0
2.0
-0.3
Max
3.6
0
Vcc+0.3
0.8
V
V
V
V
Parameter
Supply voltage
Supply voltage
High-level input voltage, all inputs
Low-level input voltage, all inputs
Vcc
Vss
V
IH
V
IL
Symbol
(Ta=0 70 C
(Note 1)
Note 1 : All voltage values are with respect to Vss.
ELECTRICAL CHARACTERISTICS
[M5M467405B / M5M467805B]
(Ta=0 70 , Vcc=3.3 0.3V, Vss=0V, unless otherwise noted)
(Note 2)
C
Symbol
V
OH
V
OL
I
OZ
I
I
I
CC1 (AV)
High-level output voltage
Low-level output voltage
Off-state output current
Input current
Average supply current
from Vcc
operating
Parameter
Limits
Typ
Min
2.4
0
-10
-10
Max
Vcc
0.4
10
10
Unit
Test conditions
(Note 3,4,5)
M5M467405B-5,5S
M5M467805B-5,5S
M5M467405B-6,6S
M5M467805B-6,6S
M5M467405B-5,5S
I
OH
=-2mA
I
OL
=2mA
Q floating 0V
V
OUT
Vcc
0V
VIN
Vcc+0.3V, Other input pins=0V
RAS, CAS cycling
t
RC
=t
WC
=min.
output open
Note 2: Current flowing into an IC is positive, out is negative.
3: Icc1 (AV) , Icc4 (AV) and Icc6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open.
5: Column Address can be changed once or less while RAS=V
IL
and CAS=V
IH
.
V
V
μA
mA
100
90
μA
RAS= CAS =V
IH,
output open
1
-6,6S
RAS= CAS
Vcc
-0.2V,output open
mA
0.5
M5M467405B-5,6
M5M467805B-5,6
M5M467405B-5S,6S
M5M467805B-5S,6S
M5M467405B-5,5S
M5M467805B-5,5S
M5M467405B-6,6S
M5M467805B-6,6S
0.3
I
CC2 (AV)
Average supply current
from Vcc
stand-by
I
CC4 (AV)
(Note 3,4,5)
Average supply current
from Vcc
EDO-Mode
RAS=V
IL,
CAS cycling
t
HPC
=min.
output open
mA
mA
100
90
I
CC6 (AV)
(Note 3,5)
Average supply current
from Vcc
CAS before RAS refresh
mode
M5M467405B-5,5S
M5M467805B-5,5S
M5M467405B-6,6S
M5M467805B-6,6S
130
120
CAS before RAS refresh cycling
t
RC
=min.
output open
(Note 6)
M5M467805B-5,5S
-6,6S
相關(guān)PDF資料
PDF描述
M5M465165BTP-6S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M465165DJ EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
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M5M465165DTP-5S EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
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M5M465165BTP-6S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M465165DJ 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M465165DTP-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M465165DTP-5S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M465165DTP-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM