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參數(shù)資料
| 型號： | M5M29FB800VP-12 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 8,388,608位（1048,576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 155K |
| 代理商： | M5M29FB800VP-12 |
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
2
FUNCTION
The M5M29FB/T800FP,VP,RV includes on-chip program/erase
control circuitry. The Write State Machine (WSM) controls block
erase and page program operations. Operational modes are
selected by the commands written to the Command User Interface
(CUI). The Status Register indicates the status of the WSM and
when the WSM successfully completes the desired program or
block erase operation.
A Deep Powerdown mode is enabled when the /RP pin is at GND,
minimizing power consumption.
BLOCK DIAGRAM
Deep Power-Down
When /RP is at VIL, the device is in the deep powerdown
mode and its power consumption is substantially low. During
read modes, the memory is deselected and the data
input/output are in a high-impedance(High-Z) state. After
return from powerdown, the CUI is reset to Read Array , and
the Status Register is cleared to value 80H.
During block erase or program modes, /RP low will abort
either operation. Memory array data of the block being altered
become invalid.
X-DECODER
Y-DECODER
Y-GATE / SENSE AMP.
INPUT/OUTPUT
BUFFERS
/CE
/OE
/WE
/WP
/RP
/BYTE
V
CC
(3.3V)
GND (0V)
DATA INPUTS/OUTPUTS
Read
The M5M29FB/T800FP,VP,RV has three read modes, which
accesses to the memory array, the Device Identifier and the Status
Register. The appropriate read command are required to be
written to the CUI. Upon initial device powerup or after exit from
deep powerdown, the M5M29FB/T800 automatically resets to read
array mode. In the read array mode, low level input to /CE and
/OE, high level input to /WE and /RP, and address signals to the
address inputs (A0-A18) output the data of the addressed location
to the data input/output(D0-15).
Write
Writes to the CUI enables reading of memory array data, device
identifiers and reading and clearing of the Status Register. They
also enable block erase and program. The CUI is written by
bringing /WE to low level, while /CE is at low level and /OE is at
high level. Address and data are latched on the earlier rising edge
of /WE and /CE. Standard micro-processor write timings are used.
D
15
/A
-1
D
14
D
13
D
12
D
2
D
1
D
0
D
3
MULTIPLEXER
CUI
WSM
STATUS / ID REGISTER
128 WORD PAGE BUFFER
Main Block 32KW
Standby
When /CE is at VIH, the device is in the standby mode and its
power consumption is reduced. Data input/output are in a
high-impedance(High-Z) state. If the memory is deselected during
block erase or program, the internal control circuits remain active
and the device consume normal active power until the operation
completes.
RY/BY
READY/BUSY OUTPUT
A
18
A
17
A
16
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
Main Block 32KW
Main Block 16KW
Parameter Block2 4KW
Parameter Block1 4KW
Boot Block 8KW
ADDRESS
INPUTS
CHIP ENABLE INPUT
OUTPUT ENABLE INPUT
WRITE ENABLE INPUT
WRITE PROTECT INPUT
RESET/POWER DOWN INPUT
BYTE ENABLE INPUT
Output Disable
When /OE is at VIH, output from the devices is disabled.
Data input/output are in a high-impedance(High-Z) state.
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| M5M29FT800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FT800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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