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參數(shù)資料
| 型號(hào)： | M5M29FB800RV-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 8,388,608位（1048,576 - 576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 151K |
| 代理商： | M5M29FB800RV-10 |
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
5
BLOCK LOCKING
D
6
provides Lock Status of each block after writing the Read Lock Status command (71H).
In case of TSOP package, /WP pin must not be switched during performing Read / Write operations or WSM Busy (WSMS = 0).
/RP
/WP
Lock Bit(Internally)
V
IL
V
HH
V
IH
V
IH
V
IH
X
X
V
IL
V
IL
V
IH
X
X
0
1
X
Write Protection Provided
All Blocks Locked (Deep Power Down Mode)
All Blocks UnLocked
Blocks Locked (Depend on Lock Bit Data)
Blocks Unlocked (Depend on Lock Bit Data)
All Blocks Unlocked
STATUS REGISTER
Status
Erase Status
Program Status
Block Status after Program
Definition
Symbol
(D
5
)
(D
4
)
(D
3
)
(D
2
)
Write State Machine Status
Suspend Status
(D
7
)
(D
6
)
Reserved
Device Sleep Status
(D
1
)
(D
0
)
Reserved
"1"
"0"
Busy
Ready
Suspended
Error
Error
Error
Operation in Progress / Completed
Successful
Successful
Successful
-
-
-
-
SR.5
SR.4
SR.3
SR.2
SR.7
SR.6
SR.1
SR.0
Device in Sleep
DEVICE IDENTIFIER CODE
Code
Manufacturer Code
Pins
Hex. Data
1CH
D
0
0
A
0
V
IL
D
1
0
D
2
1
D
3
1
D
4
1
D
5
0
D
6
0
D
7
0
Device Code (-T)
5DH
0
V
IH
1
1
1
1
0
1
0
Device Code (-B)
In the word-wide mode, the same data as D
is read out from D
15-8
.
A
9
= V
HH
Mode : A
9
= 11.5V~13.0V Set A9 to V
HH min.200ns before falling edge of /CE in ready status. Min.200ns after return to V
IH ,
device can't be accessed.
A
1
~A
8
, A
10
~A
18,
/CE,/OE = VIL, /WE = V
IH
D
15
/A
-1
= V
IL
(/BYTE = L)
5EH
0
V
IH
1
1
1
1
0
1
0
*The RY/BY is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the RY/BY signal to transition high indicating a Ready WSM condition.
Device Not in Sleep
*D3 indicates the block status after the page programming. When D3 is "1", the page has the over-programed cell . If over-program occures, the device is block
fail. However if D3 is "1", please try the block erase to the block. The block may revive.
SOFTWARE COMMAND DEFINITION
Command List
Read Array
Device Identifier
Read Status Register
Clear Status Register
Page Program
Block Erase / Confirm
Suspend
Resume
Read Lock Bit Status
Lock Bit Program / Confirm
Erase All Unlocked Blocks
Sleep
7)
FFH
90H
70H
50H
41H
20H
B0H
D0H
X
X
X
X
X
X
X
X
X
X
X
X
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
3rd bus cycle
Address
1st bus cycle
Address
2nd bus cycle
Address
Command
Mode
Data
(D
7-0
)
Mode
Data
(D
7-0
)
Mode
Data
(D
7-0
)
ID
IA
X
Read
Read
SRD
WD0
D0H
Write
Write
WA0
BA
WD1
WA1
Write
Write
Write
71H
77H
2)
3)
5)
6)
4)
A7H
F0H
Read
BA
BA
X
D0H
D0H
DQ6
2)
1) In the word-wide mode, upper byte data (D8-D15) is ignored.
2) IA=ID Code Address : A0=VIL (Manufacturer's Code) : A0=VIH (Device Code), ID=ID Code,
/BYTE =VIL : A-1, A1-A18 = VIL, /BYTE =VIH : A1-A18 = VIL
3) SRD = Status Register Data
4) WA=Write Address, WD=Write Data.
/BYTE =VIL : Write Address and Write Data must be provided sequentially from 00H to FFH for A-1-A6.
Page size is 256Byte (256byte x 8bit), /BYTE =VIH : Write Address and Write Data must be provided
sequentially from 00H to 7FH for A0-A6. Page size is 128word (128word x 16bit).
5) BA = Block Address ( Addresses except Block Address mest be VIH.)
6) DQ6 provides Block Lock Status, DQ6 = 1 : Block Unlock, DQ6 = 0 : Block Locked.
7) Sleep command (F0H) put the device into the sleep mode after completing the current operation. The active current is reduced to deep power -down levels.
The Read Array command (FFH) must be written to get the device out of sleep mode.
4)
4)
/RP
V
IL
V
HH
V
IH
V
IH
Lock Bit(Internally)
X
X
0
1
SOP Package
TSOP Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-80 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-80 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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