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參數(shù)資料
| 型號： | M59MR032-GCT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大小： | 352K |
| 代理商： | M59MR032-GCT |
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April 2001
M59MR032C
M59MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.65V to 2.0V for Program,
Erase and Read
–VPP = 12V for fast Program (optional)
s
MULTIPLEXED ADDRESS/DATA
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Configurable Burst mode Read
– Page mode Read (4 Words Page)
– Random Access: 100ns
s
PROGRAMMING TIME
– 10s by Word typical
– Double Word Programming Option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 8 Mbit - 24 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
s
COMMON FLASH INTERFACE (CFI)
s
64 bit SECURITY CODE
s
ERASE SUSPEND and RESUME MODES
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59MR032C: A4h
– Bottom Device Code, M59MR032D: A5h
BGA
LFBGA54 (ZC)
10 x 4 ball array
BGA46 (GC)
10 x 4 ball array
Figure 1. Logic Diagram
AI90109
5
A16-A20
W
ADQ0-ADQ15
VDD
M59MR032C
M59MR032D
E
VSS
16
G
RP
WP
VDDQ VPP
L
K
WAIT
BINV
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