- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359082 > M58LW064D (意法半導(dǎo)體) 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58LW064D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體 |
| 文件頁數(shù)： | 5/51頁 |
| 文件大?。?/td> | 349K |
| 代理商： | M58LW064D |
第1頁第2頁第3頁第4頁當(dāng)前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
5/51
M58LW064D
SUMMARY DESCRIPTION
The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply.
The memory is divided into 64 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
Individual block protection against Program or
Erase is provided for data security. All blocks are
protected during power-up. The protection of the
blocks is non-volatile; after power-up the protec-
tion status of each block is restored to the state
when power was last removed. Software com-
mands are provided to allow protection of some or
all of the blocks and to cancel all block protection
bits simultaneously. All Program or Erase opera-
tions are blocked when the Program Erase Enable
input V
PEN
is low.
The Reset/Power-Down pin is used to apply a
Hardware Reset to the enabled memory and to set
the device in power-down mode.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The Bus operations of the device are controlled by
Output Enable, Write Enable and three different
Chip Enables. Refer to Table 2, Device Enable, for
all possible combinations to enable and disable
the device. Together they allow simple, yet power-
ful, connection to most microprocessor, often with-
out additional logic.
The device includes a 128 bit Protection Register.
The Protection Register is divided into two 64 bit
segments, the first one is written by the manufac-
turer (contact STMicroelectronics to define the
code to be written here), while the second one is
programmable by the user. The user programma-
ble segment can be locked.
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10x13mm
,
1mm pitch) packages.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064D110N1 | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1F | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1T | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064D110N1 | 制造商:Micron Technology Inc 功能描述: |
| M58LW064D110N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。