參數(shù)資料
型號: M58LW064D110ZA1F
廠商: 意法半導體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁數(shù): 20/51頁
文件大?。?/td> 349K
代理商: M58LW064D110ZA1F
M58LW064D
20/51
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6μs, effective word programming time 12μs.
4. Maximum value measured at worst case conditions for both temperature and V
DD
after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and V
DD
.
Parameters
M58LW064D
Unit
Min
Typ
(1,2)
Max
(2)
Block (1Mb) Erase
1.2
4.8
(4)
s
Chip Program (Write to Buffer)
49
145
(4)
s
Chip Erase Time
74
220
(4)
s
Program Write Buffer
192
(3)
576
(4)
μs
Word/Byte Program Time
(Word/Byte Program command)
16
48
(4)
μs
Program Suspend Latency Time
1
20
(5)
μs
Erase Suspend Latency Time
1
25
(5)
μs
Block Protect Time
18
30
(5)
μs
Blocks Unprotect Time
0.75
1.2
(5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years
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M58LW064D110ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel