參數(shù)資料
型號： M58LW064BZA
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述： 64兆位x16和x16/x32，塊擦除低壓閃存
文件頁數(shù)： 45/53頁
文件大小： 319K
代理商： M58LW064BZA
45/53
M58LW064A, M58LW064B
Figure 24. Command Interface and Program Erase Controller Flowchart (a)
Note: 1. If no command is written, the Command Interface remains in its previous valid state. Upon power-up, on exit from power-down or
if V
DD
falls below V
LKO
, the Command Interface defaults to Read Array mode.
2. P/E.C. status (Ready or Busy) is read on Status Register bit 7.
AI03618
READ
SIGNATURE
YES
NO
90h
READ
STATUS
YES
70h
NO
CLEAR
STATUS
YES
50h
NO
PROGRAM
BUFFER
LOAD
YES
E8h
NO
ERASE
SET-UP
YES
20h
NO
ERASE
COMMAND
ERROR
YES
FFh
WAIT FOR
COMMAND
WRITE (1)
READ
STATUS
READ
ARRAY
YES
D0h
NO
A
B
NO
C
CFI
QUERY
YES
98h
NO
相關(guān)PDF資料
PDF描述
M58LW064A150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNH 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNF 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
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