參數(shù)資料
型號(hào)： M58LW064B150NH6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述： 64兆位x16和x16/x32，塊擦除低壓閃存
文件頁(yè)數(shù)： 2/53頁(yè)
文件大?。?/td> 319K
代理商： M58LW064B150NH6T
M58LW064A, M58LW064B
2/53
The devices support Asynchronous Random and
Latch EnableControlled Read with Page mode as
well as Synchronous Burst Read with a config-
urable burst. They alsosupport pipelined synchro-
nous Burst Read. Writing is Asynchronous or
Asynchronous Latch Enable Controlled.
The configurablesynchronous burst readinterface
allows a high data transfer rate controlled by the
Burst Clock Ksignal. It is capable of bursting fixed
or unlimited lengths of data. The burst type, laten-
cy and length are configurable and can be easily
adapted to a large variety of system clock frequen-
cies and microprocessors. A 16Word or 8 Double-
Word Write Buffer improves effective program-
ming speed by up to 20 times when data is pro-
grammed in full buffer increments. Effective Word
programming takes typically 12
μ
s. The array ma-
trix organisation allows each block to be erased
and reprogrammed without affecting other blocks.
Program and Erase operations can be suspended
in order to perform either Read or Program in any
other block and then resumed. All blocks are pro-
tected against spurious programming and erase
cycles at power-up. Any block can be separately
protected at any time. The block protection bits
can also be deleted, this is executed as one se-
quence for all blockssimultaneously. Block protec-
tion can be temporarily disabled. Each block can
be programmed and erased over 100,000 cycles.
Block erase is performed in typically 1 second.
An internal Command Interface (C.I.) decodes In-
structions to access/modify the memory content.
The Program/Erase Controller (P/E.C.) automati-
cally executes the algorithms taking care of the
timings required by the program and erase opera-
tions. Verification is internally performed and a
Status Register tracks thestatus of the operations.
The Ready/Busy output RB indicates the comple-
tion of operations.
Instructions are written to the memory through the
Command Interface (C.I.) using standard micro-
processor write timings. The device supports the
Common Flash Interface (CFI) command set defi-
nition.
A Reset/Power-down mode is entered when the
RP input is Low. In this modethe power consump-
tion is lower than in the normalstandby mode, the
device is write protected and both the Status and
the Burst Configuration Registers are cleared. A
recovery time is required when the RP input goes
High.
The device is offered in various package versions,
TSOP56 (14 x 20 mm), TSOP86 Type II (11.76 x
22.22 mm) and LBGA54 1mm ball pitch for the
M58LW064A and PQFP80 for the M58LW064B.
Table 1. Signal Names
A1-A22
Address Inputs x16 Organisation
A2-A22
Address inputs x32 Organisation
DQ0-DQ7
Data Input/Output x16 and x32
Organisation Command Input,
Electronic Signature Output, Block
Protection Ststus Output, Status
Register Output
DQ8-DQ15
Data Input/Output x16 and x32
Organisation
DQ16-DQ31
Data Input/Output x32 Organisation
B
Burst Address Advance
E
Chip Enable
G
Output Enable
K
Burst Clock
L
Latch Enable
R
Valid Data Ready (open drain output)
RB
Ready/Busy (open drain output)
RP
Reset/Power-down
V
PP
Program/Erase Enable
W
Write Enable
WORD
Word Organisation (M58LW064B only)
V
DD
Supply Voltage
V
DDQ
Input/Output Supply Voltage
V
SS
Ground
NC
No internal connection
DU
Don’t Use (internally connected)
相關(guān)PDF資料
PDF描述
M58LW064BNH 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNF 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C110ZA6T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064B150T1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*