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    參數(shù)資料
    型號: M58LW064AZA
    廠商: 意法半導體
    英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
    中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
    文件頁數(shù): 36/53頁
    文件大小: 319K
    代理商: M58LW064AZA
    M58LW064A, M58LW064B
    36/53
    Table 26. Asynchronous Write and Latch Enable Controlled Write
    (T
    A
    = 0 to 70
    °
    C, –40 to 85
    °
    C, V
    DD
    = 2.7V to 3.6V, V
    DD
    = 1.8V to V
    DD
    )
    Symbol
    Parameter
    Test Condition
    Min
    Max
    Unit
    t
    AVLH
    Address Validto Latch Enable High
    10
    ns
    t
    AVWH
    Address Validto Write Enable High
    E = V
    IL
    50
    ns
    t
    DVWH
    Data Input Valid to Write Enable High
    E = V
    IL
    50
    ns
    t
    ELWL
    Chip Enable Low to Write Enable Low
    0
    ns
    t
    LHAX
    Latch Enable High to Address Transition
    3
    ns
    t
    LLLH
    Latch Enable low to Latch Enable High
    10
    ns
    t
    LLWH
    latch Enable Low to Write Enable High
    50
    ns
    t
    QVRH
    Output Valid to Reset/Power Down VDD
    0
    ns
    t
    QVVPL
    Output Valid to Program/Erase Enable Low
    0
    ns
    t
    RHHWH
    Reset/Power Down VHH to Write Enable High
    0
    ns
    t
    VPHWH
    Program/Erase Enable High to Write Enable High
    0
    ns
    t
    WHAX
    Write Enable High to Address Transition
    E = V
    IL
    10
    ns
    t
    WHBL
    Write Enable High to Read/Busy low
    90
    ns
    t
    WHDX
    Write Enable High to Input Transition
    E = V
    IL
    10
    ns
    t
    WHEH
    Write Enable High to Chip Enable High
    0
    ns
    t
    WHGL
    Write Enable High to Output Enable Low
    35
    ns
    t
    WHWL
    Write Enable High to Write Enable Low
    30
    ns
    t
    WLWH
    Write Enable Low to Write Enable High
    E = V
    IL
    70
    ns
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