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參數(shù)資料
| 型號(hào)： | M58LW032D90ZA6T |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的× 8，功能的2Mb x16插槽，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 17/51頁(yè) |
| 文件大?。?/td> | 748K |
| 代理商： | M58LW032D90ZA6T |
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M58LW032D
Table 4. Commands
Note: 1. X Don’t Care; RA Read Address, RD Read Data, IDA Identifier Address, IDD Identifier Data, SRD Status Register Data, PA Program
Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, PRA Protection register address,
PRD Protection Register Data, CC Configuration Code.
2. For Identifier addresses and data refer to Table 6, Read Electronic Signature.
3. For Query Address and Data refer to Appendix B, CFI.
Table 5. Configuration Codes
Note: 1. DQ2-DQ7 are reserved
2. When STS pin is pulsing it remains Low for a typical time of 250ns.
Command
C
Bus Operations
1st Cycle
2nd Cycle
Subsequent
Final
Op.
Addr. Data
Op.
Addr.
Data
Op.
Addr. Data Op.
Addr. Data
Read Memory Array
≥
2
Write
X
FFh
Read
RA
RD
Read Electronic Signature
≥
2
Write
X
90h
Read
IDA
(2)
IDD
(2)
Read Status Register
2
Write
X
70h
Read
X
SRD
Read Query
≥
2
Write
X
98h
Read
QA
(3)
QD
(3)
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BA
D0
Word/Byte Program
2
Write
X
40h
10h
Write
PA
PD
Write to Buffer and
Program
4 + N Write
BA
E8h
Write
BA
N
Write
PA
PD
Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Block Protect
2
Write
X
60h
Write
BA
01h
Blocks Unprotect
2
Write
X
60h
Write
X
D0h
Protection Register
Program
2
Write
X
C0h
Write
PRA
PRD
Configure STS command
2
Write
X
B8h
Write
X
CC
Configuration
Code
DQ1
DQ2
Mode
STS Pin
Description
00h
0
0
Ready/Busy
V
OL
during P/E
operations
Hi-Z when the
memory is ready
The STS pin is Low during Program and
Erase operations and high impedance when
the memory is ready for any Read, Program
or Erase operation.
01h
0
1
Pulse on Erase
complete
Pulse Low then
High when
operation
completed
(2)
Supplies a system interrupt pulse at the end
of a Block Erase operation.
02h
1
0
Pulse on
Program
complete
Supplies a system interrupt pulse at the end
of a Program operation.
03h
1
1
Pulse on Erase
or Program
complete
Supplies a system interrupt pulse at the end
of a Block Erase or Program operation.
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PDF描述 |
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| M58LW032DN | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032DZA | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D110ZA1 | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D110ZA1E | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032DN | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032DZA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW064 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150N1 | 功能描述:閃存 8Mx8 or 4Mx16 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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