- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359082 > M58LW032D90ZA6F (意法半導(dǎo)體) 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58LW032D90ZA6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的× 8，功能的2Mb x16插槽，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁數(shù)： | 12/51頁 |
| 文件大?。?/td> | 748K |
| 代理商： | M58LW032D90ZA6F |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
M58LW032D
12/51
BUS OPERATIONS
There are five standard bus operations that control
the memory. Each of these is described in this
section, see Tables 3, Bus Operations, for a sum-
mary.
On Power-up or after a Hardware Reset the mem-
ory defaults to Read Array mode (Page Read).
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read.
Bus Read operations are used to out-
put the contents of the Memory Array, the Elec-
tronic Signature, the Status Register, the Common
Flash Interface and the Block Protection Status.
A valid bus operation involves setting the desired
address on the Address inputs, enabling the de-
vice (refer to Table 2, Device Enable), applying a
Low signal, V
IL
, to Output Enable and keeping
Write Enable High, V
IH
. The data read depends on
the previous command written to the memory (see
Command Interface section).
See Figure 9, Bus Read AC Waveforms, and Ta-
ble 15, Bus Read AC Characteristics, for details of
when the output becomes valid.
Bus Write.
Bus Write operations write Com-
mands to the memory or latch addresses and input
data to be programmed.
A valid Bus Write operation begins by setting the
desired address on the Address Inputs and en-
abling the device (refer to Chip Enable section).
The Address Inputs are latched by the Command
Interface on the rising edge of Write Enable or the
first edge of E0, E1 or E2 that disables the device
(refer to Table 2, Device Enable).
The Data Input/Outputs are latched by the Com-
mand Interface on the rising edge of Write Enable
or the first edge of E0, E1 or E2 that disables the
device whichever occurs first. Output Enable must
remain High, V
IH
, during the Bus Write operation.
See Figures 11, and 12, Write AC Waveforms, and
Tables 17 and 18, Write and Chip Enable Con-
trolled Write AC Characteristics, for details of the
timing requirements.
Output Disable.
The Data Inputs/Outputs are
high impedance when the Output Enable is at V
IH
.
Power-Down.
The memory is in Power-Down
mode when Reset/Power-Down, RP, is Low. The
power consumption is reduced to the Power-Down
level, I
DD2
, and the outputs are high impedance,
independent of Chip Enable, Output Enable or
Write Enable.
Standby.
Standby disables most of the internal
circuitry, allowing a substantial reduction of the
current consumption. The memory is in standby
when Chip Enable is at V
IH
. The power consump-
tion is reduced to the standby level I
DD1
and the
outputs are set to high impedance, independently
of the Output Enable or Write Enable inputs.
If Chip Enable switches to V
IH
during a program or
erase operation, the device enters Standby mode
when finished.
Table 3. Bus Operations
Note: 1. DQ8-DQ15 are High Z in x8 mode.
2. X = Don’t Care V
IL
or V
IH
.
Bus Operation
E0, E1
or E2
G
W
RP
A1-A21 (x16)
A0-A21 (x8)
DQ0-DQ15 (x16)
DQ0-DQ7 (x8)
(1)
Bus Read
V
IL
V
IL
V
IH
V
IH
Address
Data Output
Bus Write
V
IL
V
IH
V
IL
V
IH
Address
Data Input
Output Disable
V
IL
V
IH
V
IH
V
IH
X
High Z
Power-Down
X
X
X
V
IL
X
High Z
Standby
V
IH
X
X
V
IH
X
High Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW032D90ZA6T | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032DN | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032DZA | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D110ZA1 | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D110ZA1E | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032D90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032DN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032DZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW064 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。